IP Library Patent Application 12306120
Patent Application
App. No. 12/306,120

METHOD FOR PRODUCING A LAYER CONTAINING INORGANIC SEMICONDUCTOR PARTICLES, AND COMPONENTS COMPRISING SAID LAYER

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Quick Facts
Patent No.
US None
App. No.
12/306,120
Abstract

The invention relates to a method for producing a layer containing inorganic semiconductor particles. According to the invention, the layer containing inorganic semiconductor particles is formed in situ from metal salts and/or metal compounds and a salt-type or organic reactant within a semiconducting organic matrix. The layers containing inorganic semiconductor particles and produced according to the invention enable a simple and cost-effective production process for photovoltaic elements, such as solar cells or photodetectors.

Claims (17)

1 . Process for the production of an inorganic semiconductor-particle-containing layer, characterized in that the inorganic semiconductor-particle-containing layer is formed in situ from metal salts and/or metal compounds and a salt-like or organic reactant within a semiconducting organic matrix.

2 . Process according to claim 1 , wherein an inorganic semiconductor-containing photoactive layer is formed.

3 . Process according to claim 1 , wherein inorganic semiconductor particles in an order of magnitude of 0.5 nm to 500 nm are formed in the layer.

4 . Process according to claim 1 , wherein the inorganic semiconductor particles are formed in the layer by heating the starting components to temperatures of greater than 50° C.

5 . Process according to claim 1 , wherein the inorganic semiconductor particles are formed in the layer by irradiating the starting components with energies of greater than 1 eV.

6 . Process according to claim 1 , wherein the inorganic semiconductor particles are sulfides, selenides, or tellurides.

7 . Process according to claim 1 , wherein the inorganic semiconductor particles are elementary semiconductors.

8 . Process according to claim 1 , wherein the inorganic semiconductor particles are carbides, phosphides, nitrides, antimonides or arsenides.

9 . Process according to claim 1 , wherein the inorganic semiconductor particles are oxides.

10 . Process according to claim 1 , wherein at least one semiconducting polymer that is used is formed as a semiconducting organic matrix.

11 . Process according to claim 10 , wherein the semiconducting polymer is selected from the group polyphenylenevinylene, polythiophene, polyaniline, polyfluorene, polyphenylene, polypyrrole as well as derivatives thereof.

12 . Process according to claim 1 , wherein low-molecular organic compounds are used as a semiconducting organic matrix.

13 . Process according to claim 12 , wherein the low-molecular organic compounds are selected from the group of phthalocyanines as well as perylenes.

14 . Component comprising at least one inorganic semiconductor-particle-containing layer that is produced according to a process according to claim 1 .

15 . Component according to claim 14 , wherein the component is a solar cell, preferably a hybrid solar cell.

16 . Component according to claim 14 , wherein the active element is a photodetector.

17 . Process according to claim 2 , wherein inorganic semiconductor particles in an order of magnitude of 0.5 nm to 500 nm are formed in the layer.

Assignments (3)
CHANGE OF NAME Recorded May 27, 2011
From: ISOVOLTAIC GMBH
To: ISOVOLTAIC AG
Reel/Frame 026357/0187 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2010
From: ISOVOLTA AG
To: ISOVOLTAIC GMBH
Reel/Frame 025143/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2009
From: PIBER, MONIKA SOFIE; TRIMMEL, GREGOR; STELZER, FRANZ; RATH, THOMAS; PLESSING, ALBERT K; MEISSNER, DIETER
To: ISOVOLTA AG
Reel/Frame 022389/0017 →