Field-effect transistor
View Patent ↗Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X 1 and X 2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R 1 and R 2 independently represent an unsubstituted or halogeno-substituted C 1 -C 36 aliphatic hydrocarbon group.)
1. A field-effect transistor characterized by containing a compound represented by formula (1) below as a semiconductor material:
(wherein, X 1 and X 2 are each independently a sulfur atom, a selenium atom or a tellurium atom; and R 1 and R 2 are each independently an unsubstituted or halogeno-substituted C1 to C36 aliphatic hydrocarbon group).
2. The field-effect transistor according to claim 1 , wherein X 1 and X 2 in the formula (1) are each independently a sulfur atom or a selenium atom.
3. The field-effect transistor according to claim 1 , wherein X 1 and X 2 in the formula (1) are each a sulfur atom.
4. The field-effect transistor according to claim 1 , wherein R 1 and R 2 in the formula (1) are each independently an unsubstituted or halogeno-substituted C2 to C24 aliphatic hydrocarbon group.
5. The field-effect transistor according to claim 1 , wherein R 1 and R 2 in the formula (1) are each independently an unsubstituted or halogeno-substituted C4 to C20 aliphatic hydrocarbon group.
6. The field-effect transistor according to claim 1 , wherein R 1 and R 2 in the formula (1) are each independently an unsubstituted aliphatic hydrocarbon group.
7. The field-effect transistor according to claim 6 , wherein R 1 and R 2 in the formula (1) are each independently a saturated aliphatic hydrocarbon group.
8. The field-effect transistor according to claim 7 , wherein R 1 and R 2 in the formula (1) are each independently a straight-chain aliphatic hydrocarbon group.
9. The field-effect transistor according to claim 1 , having a top-contact type structure, characterized in that the layer containing a compound represented by the formula (1) is provided on an insulating layer provided on a gate electrode, and further a source electrode and a drain electrode are separately provided so as to be in contact with an upper portion of the layer.
10. The field-effect transistor according to claim 1 , characterized in that the layer containing a compound represented by the formula (1) is provided on electrodes of a bottom-contact type structure, which has an insulating layer, a gate electrode isolated by the insulating layer, and a source electrode and a drain electrode provided so as to be in contact with the insulating layer.
11. The field-effect transistor according to claim 9 , characterized in that the layer containing a compound represented by the formula (1) is provided by an inkjet recording method.
12. Ink for manufacturing a semiconductor device characterized by containing a compound represented by the formula (1).
13. A method for manufacturing a field-effect transistor characterized by forming a semiconductor layer by applying the ink for manufacturing a semiconductor device according to claim 12 onto a substrate and drying the ink.
14. The method for manufacturing a field-effect transistor according to 13, characterized in that the application of ink is performed by an inkjet recording method.
15. The method for manufacturing a field-effect transistor according to claim 13 , characterized by forming the semiconductor layer in the atmosphere.
16. The method for manufacturing a field-effect transistor according to claim 13 , characterized by performing a heat treatment after the semiconductor layer is formed.
17. The method for manufacturing a field-effect transistor according to claim 16 , characterized in that temperature of the heat treatment is 40 to 120° C.
18. A compound represented by formula (2) below:
(wherein R 1 and R 2 are each independently an unsubstituted or halogeno-substituted C1 to C36 aliphatic hydrocarbon group).
19. A compound represented by formula (3) below:
(wherein, R 3 and R 4 are each independently an unsubstituted or halogeno-substituted C1 to C34 aliphatic hydrocarbon group; and X 1 and X 2 are each independently a sulfur atom, a selenium atom or a tellurium atom).
20. The field-effect transistor according to claim 1 , wherein R 1 and R 2 in the formula (1) are each independently an unsaturated aliphatic hydrocarbon group.
21. The field-effect transistor according to claim 1 , wherein R 1 and R 2 in the formula (1) are each independently a branched aliphatic hydrocarbon group.
22. The compound according to claim 18 , wherein R 1 and R 2 in the formula (2) are each independently an unsaturated or branched aliphatic hydrocarbon group.
23. The compound according to claim 19 , wherein R 3 and R 4 in the formula (3) are each independently an unsaturated or branched aliphatic hydrocarbon group.
24. A field-effect transistor according to claim 1 , wherein R 1 and R 2 are each independently an unsubstituted C1 to C36 aliphatic hydrocarbon group.
25. A field-effect transistor according to claim 1 , wherein R 1 and R 2 are each independently an unsubstituted C4 to C20 aliphatic hydrocarbon group.
26. A field-effect transistor according to claim 1 , wherein R 1 and R 2 are each independently an unsubstituted C4 to C14 aliphatic hydrocarbon group.
27. A field-effect transistor according to claim 1 , wherein R 1 and R 2 are each an n-C8H17 group.
28. A field-effect transistor according to claim 1 , wherein R 1 and R 2 are each an n-C12H25 group.