Semiconductor output circuit for controlling power supply to a load
View Patent ↗Between a control terminal (gate) of an output transistor of a source follower configuration and an output terminal to which a load is coupled, a depletion transistor having a relatively lower breakdown voltage (that is, smaller device-area) is provided as a shutdown transistor of the output transistor, to thereby control a conductive state/nonconductive state of the depletion transistor. There are provided: the output transistor of the source follower configuration coupled between a first power supply line and the output terminal; the load coupled between the output terminal and a second power supply line; the depletion transistor coupled between the gate of the output transistor and the output terminal; and a control circuit controlling the conductive state/nonconductive state of the depletion transistor by applying, between a gate and a source thereof, a voltage smaller than a voltage deference between a potential of the first power supply line and a potential of the second power supply line.
1. A semiconductor output circuit, comprising:
a first power supply line;
an output terminal to be coupled to a second power supply line through a load;
an output transistor coupled between the first power supply line and the output terminal;
a depletion transistor coupled between a control terminal of the output transistor and the output terminal, wherein a voltage applied between a gate and a source of the depletion transistor is smaller than a voltage difference between a potential of the first power supply line and a potential of the second power supply line when the output transistor is in a conductive state and a nonconductive state;
an intermediate voltage generating circuit generating an intermediate potential between the potential of the first power supply line and the potential of the second power supply line to an intermediate voltage line; and
a control circuit which causes the gate of the depletion transistor to have a potential related to the intermediate voltage in a case of causing the output transistor to be in the conductive state, and couples the gate and the source of the depletion transistor in a case of causing the output transistor to be in the nonconductive state.
2. A semiconductor output circuit according to claim 1 , wherein:
the output transistor is driven in response to a control signal; and
the control circuit comprises:
a series circuit of a switch transistor and an impedance device, which are coupled between the intermediate voltage line and the output terminal; and
an inverter which is operated at a voltage between the potential of the first power supply line and the intermediate potential of the intermediate voltage line, and inverts the control signal to supply the inverted control signal to a gate of the switch transistor.
3. A semiconductor output circuit according to claim 2 , wherein the switch transistor of the control circuit is defined as a first switch transistor, the control circuit further comprising:
a series circuit of a second switch transistor and a constant voltage device, which are provided between the first power supply line and the output terminal,
wherein
an output of the inverter is supplied to a gate of the second switch transistor, and
a node between the second switch transistor and the constant voltage device is coupled to the source of the depletion transistor.
4. A semiconductor output circuit according to claim 1 , wherein the depletion transistor has a substrate terminal coupled to the gate thereof.
5. A semiconductor output circuit according to claim 1 , further comprises a constant current source device provided in series with the depletion transistor between the control terminal of the output transistor and the output terminal.
6. A semiconductor output circuit according to claim 5 , wherein the constant current source device comprises a depletion transistor.
7. A semiconductor output circuit according to claim 1 , wherein:
the output transistor is driven by a gate drive circuit; and
an output of the gate drive circuit becomes a high impedance state when the output transistor is shifted from the conductive state to the nonconductive state.
8. A semiconductor output circuit according to claim 7 , wherein the gate drive circuit generates a potential higher than a potential of the first power supply line in response to the control signal which causes the output transistor to be in the conductive state.
9. A semiconductor output circuit, comprising:
a first power supply line;
an output terminal to be coupled to a second power supply line through a load;
an output transistor coupled between the first power supply line and the output terminal;
a depletion transistor coupled between a control terminal of the output transistor and the output terminal, wherein a voltage applied between a gate and a source of the depletion transistor is smaller than a voltage difference between a potential of the first power supply line and a potential of the second power supply line when the output transistor is in a conductive state and a nonconductive state; and
a constant current source device provided in series with the depletion transistor between the control terminal of the output transistor and the output terminal, wherein the constant current source device comprises a depletion transistor.
10. A semiconductor output circuit according to claim 9 , further comprising:
an intermediate voltage generating circuit generating an intermediate potential between the potential of the first power supply line and the potential of the second power supply line to an intermediate voltage line; and
a control circuit which causes the gate of the depletion transistor to have a potential related to the intermediate voltage in a case of causing the output transistor to be in the conductive state, and couples the gate and the source of the depletion transistor in a case of causing the output transistor to be in the nonconductive state,
wherein:
the output transistor is driven in response to a control signal; and
the control circuit comprises:
a series circuit of a switch transistor and an impedance device, which are coupled between the intermediate voltage line and the output terminal; and
an inverter which is operated at a voltage between the potential of the first power supply line and the intermediate potential of the intermediate voltage line, and inverts the control signal to supply the inverted control signal to a gate of the switch transistor.
11. A semiconductor output circuit according to claim 10 , wherein the switch transistor of the control circuit is defined as a first switch transistor, the control circuit further comprising:
a series circuit of a second switch transistor and a constant voltage device, which are provided between the first power supply line and the output terminal,
wherein
an output of the inverter is supplied to a gate of the second switch transistor, and
a node between the second switch transistor and the constant voltage device is coupled to the source of the depletion transistor.
12. A semiconductor output circuit according to claim 9 , wherein the depletion transistor has a substrate terminal coupled to the gate thereof.
13. A semiconductor output circuit according to claim 9 , wherein:
the output transistor is driven by a gate drive circuit; and
an output of the gate drive circuit becomes a high impedance state when the output transistor is shifted from the conductive state to the nonconductive state.
14. A semiconductor output circuit according to claim 13 , wherein the gate drive circuit generates a potential higher than a potential of the first power supply line in response to the control signal which causes the output transistor to be in the conductive state.
15. A semiconductor output circuit, comprising:
a first power supply line;
an output terminal to be coupled to a second power supply line through a load;
an output transistor coupled between the first power supply line and the output terminal;
a depletion transistor coupled between a control terminal of the output transistor and the output terminal;
an intermediate voltage generating circuit generating an intermediate potential between a potential of the first power supply line and a potential of the second power supply line to an intermediate voltage line; and
a control circuit coupling a gate of the depletion transistor to the intermediate voltage line when the output transistor is in a conductive state or coupling the gate of the depletion transistor to the output terminal when the output transistor is in a nonconductive state.
16. A semiconductor output circuit according to claim 15 , wherein:
the output transistor is driven in response to a control signal; and
the control circuit comprises:
a series circuit of a switch transistor and an impedance device, which are coupled between the intermediate voltage line and the output terminal; and
an inverter which is operated at a voltage between the potential of the first power supply line and the intermediate potential of the intermediate voltage line, and inverts the control signal to supply the inverted control signal to a gate of the switch transistor.
17. A semiconductor output circuit according to claim 16 , wherein the switch transistor of the control circuit is defined as a first switch transistor, the control circuit further comprising:
a series circuit of a second switch transistor and a constant voltage device, which are provided between the first power supply line and the output terminal,
wherein
an output of the inverter is supplied to a gate of the second switch transistor, and
a node between the second switch transistor and the constant voltage device is coupled to the source of the depletion transistor.
18. A semiconductor output circuit according to claim 15 , wherein the depletion transistor has a substrate terminal coupled to the gate thereof.
19. A semiconductor output circuit according to claim 15 , further comprising a constant current source device provided in series with the depletion transistor between the control terminal of the output transistor and the output terminal.