Interfering excitations in FQHE fluids
An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.
1. An apparatus comprising:
a substrate having a planar top surface;
a multilayer of semiconductor layers located on the planar surface, the multilayer including a 2D quantum well;
a plurality of electrodes located over the multilayer, a first set of the electrodes being located to substantially surround a lateral area of the 2D quantum well; and
a dielectric layer located between the electrodes and the multilayer; and
wherein a second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well, a third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.
2. The apparatus of claim 1 , wherein the 2D quantum well has a well layer located more than 100 nm from a nearest surface of the multilayer.
3. The apparatus of claim 1 , wherein the plurality of electrodes includes, at least, two point-like electrodes.
4. The apparatus of claim 1 , wherein the second set of the electrodes can back scatter an edge current propagating along one edge of a FQHE droplet to an opposite edge of said FQHE droplet.
5. The apparatus of claim 1 , wherein a fourth set of the electrodes is located to substantially surround a second lateral area of the 2D quantum well, the two lateral areas being disjoint, some of the electrodes being controllable to vary a lateral width of a non-depleted channel between the two lateral areas.
6. The apparatus of claim 1 , wherein the electrodes includes one point-like electrode located in each of the lateral areas.
7. The apparatus of claim 6 , wherein the electrodes includes a bridge electrode located between the point-like electrodes and between a pair of gating electrodes.
8. The apparatus of claim 7 , wherein the bridge electrode are operable to transport a localized FQHE excitation between the point-like electrodes.
9. The apparatus of claim 7 , wherein the bridge electrode is operable to transport a localized FQHE excitation between the point-like electrodes.
10. The apparatus of claim 7 , wherein the bridge electrode includes a plurality of electrodes between the point-like electrodes.
11. The apparatus of claim 6 , wherein the plurality of electrodes includes a bridge electrode located between the point-like electrodes and between a pair of gating electrodes.
12. The apparatus of claim 1 , wherein the 2D quantum well comprises AlGaAs barrier layers and a GaAs well layer located between the barrier layers.
13. The apparatus of claim 1 , wherein a well layer and adjacent portions of the barrier layers of the 2D quantum well are substantially undoped.