Semiconductor device including first substrate having plurality of wires and a plurality of first electrodes and a second substrate including a semiconductor chip being mounted thereon, and second electrodes connected with first electrodes of first substrate
View Patent ↗A semiconductor device includes a semiconductor chip, a first substrate, and a second substrate. The first substrate includes a plurality of wires and a plurality of first electrodes, each first electrode being connected with each wire. The second substrate includes the semiconductor chip that is mounted thereon, and a plurality of second electrodes with, each second electrode being connected with the each first electrode of the first substrate. The widths of the wires of the first substrate are different depending on the lengths of the wires. By changing the widths of the wires depending on their lengths, it is possible to reduce variation in stiffness of the electrodes and vicinities of electrodes, whereby variation in ultrasonic bonding strength can be reduced.
1. A semiconductor device comprising:
a semiconductor chip;
a first substrate including a plurality of wires and a plurality of first electrodes, each first electrode being connected with at least a corresponding one of the plurality of wires, and the widths of the wires being different depending on the lengths of the wires; and
a second substrate including the semiconductor chip being mounted thereon, and a plurality of second electrodes, each second electrode being electrically connected with at least a corresponding one of the first electrodes of the first substrate,
wherein a width of each one of the wires is inversely related to a length of the each one of the wires.
2. The semiconductor device according to claim 1 , wherein one wire of the plurality of wires whose length is longer than the other wires of the plurality of wire is finer than the other wire.
3. The semiconductor device according to claim 1 , wherein the wires become finer as the wires become longer.
4. The semiconductor device according to claims 1 , wherein the second substrate includes:
a first wire formed on one surface of the second substrate,
a second wire formed on another surface of the second substrate, and
a via which penetrates through the second substrate and which electrically connects the first wire and the second wire.
5. The semiconductor device according to claims 1 , wherein the first substrate and the second substrate are bonded by ultrasonic bonding.
6. The semiconductor device according to claim 1 , further comprising:
a third substrate including a semiconductor chip being mounted thereon, the third substrate being stacked on the second substrate.
7. The semiconductor device according to claim 1 , wherein the second substrate is a flexible substrate.
8. The semiconductor device according to claims 1 , wherein the semiconductor chip is mounted on the second substrate and is electrically connected with the second substrate.
9. The semiconductor device according to claim 1 , wherein the width of each one of the wires is inversely proportional with the length of the each one of the wires.
10. The semiconductor device according to claim 1 , wherein the plurality of wires being formed on at least a first side and a second side of the first substrate, each of the plurality of wires on the first side of the first substrate being connected to a corresponding one of the plurality of wires on the second side through a corresponding one of a plurality of vias, and the widths of the plurality of wires varying according to a distance from a corresponding one of the plurality of first electrodes connected thereto.
11. A semiconductor device comprising:
a semiconductor chip;
a first substrate including a plurality of wires and a plurality of first electrodes, the plurality of first electrodes and the plurality of wires being formed on a first side and a second side of the first substrate and connected from the first side to the second side through corresponding vias, a width of each one of the wires, throughout a length, varying from other wires depending on the length; and
a second substrate including the semiconductor chip being mounted thereon, and a plurality of second electrodes, each second electrode being electrically connected with at least a corresponding one of the first electrodes of the first substrate.
12. The semiconductor device according to claim 11 , wherein a width of each one of the wires is inversely proportional with a length of the each one of the wires.
13. The semiconductor device according to claim 11 , wherein one wire of the plurality of wires whose length is longer than the other wires of the plurality of wire is finer than the other wire.
14. The semiconductor device according to claim 11 , wherein the wires become finer as the wires become longer.
15. The semiconductor device according to claims 11 , wherein the second substrate includes:
a first wire formed on one surface of the second substrate;
a second wire formed on another surface of the second substrate; and
a via which penetrates through the second substrate and which electrically connects the first wire and the second wire.
16. The semiconductor device according to claims 11 , wherein the first substrate and the second substrate are bonded by ultrasonic bonding.
17. The semiconductor device according to claim 11 , further comprising:
a third substrate including a semiconductor chip being mounted thereon, the third substrate being stacked on the second substrate.
18. The semiconductor device according to claim 11 , wherein the second substrate is a flexible substrate.
19. The semiconductor device according to claims 11 , wherein the semiconductor chip is mounted on the second substrate and is electrically connected with the second substrate.