Light emitting device and method of forming the same

1. A light-emitting device, comprising:

a first multi-layer structure comprising:

a first lower layer;

a first upper layer; and

a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer;

a second thick layer neighboring the first multi-layer structure;

a second connection layer associated with the second thick layer;

a connective line electrically connected to the second connection layer and the first multi-layer structure;

a dielectric layer between the first multi-layer structure and the second connection layer;

a substrate; and

an ohmic contact electrode between the first multi-layer structure and the substrate.

2. The light-emitting device of claim 1 , wherein the second thick layer has an opening associated with the second connection layer.

3. The light-emitting device of claim 1 , wherein the second thick layer has an elevation substantially equal to that of the first multi-layer structure.

4. The light-emitting device of claim 1 , wherein the second thick layer is electrically isolated from the first multi-layer structure.

5. The light-emitting device of claim 1 , wherein the second connection layer is substantially through the second thick layer.

6. The light-emitting device of claim 1 , further comprising an adhesive layer between the first multi-layer structure and the substrate.

7. The light-emitting device of claim 1 , further comprising:

a second multi-layer structure electrically connected to the second connection layer and comprising:

a second lower layer;

a second upper layer; and

a second active layer able to emit light under a bias voltage and between the second lower layer and the second upper layer.

8. The light-emitting device of claim 1 , further comprising:

a first thick layer associated with the first multi-layer structure; and

a first connection layer associated with the first thick layer.

9. The light-emitting device of claim 1 , wherein the second thick layer is between the second connection layer and the first multi-layer structure.

10. A light-emitting device, comprising:

a first multi-layer structure comprising:

a first lower layer;

a first upper layer; and

a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer;

a second thick layer neighboring the first multi-layer structure and having an elevation substantially equal to that of the first multi-layer structure;

a second connection layer associated with the second thick layer;

a connective line electrically bridging the first multi-layer structure and the second connection layer;

a substrate; and

an ohmic contact electrode between the first multi-layer structure and the substrate.

11. The light-emitting device of claim 10 , wherein the second thick layer has an opening associated with the second connection layer.

12. The light-emitting device of claim 1 , wherein the second thick layer is electrically isolated from the first multi-layer structure.

13. The light-emitting device of claim 10 , further comprising a second electrode above the second connection layer and being associated with the connective line.

14. The light-emitting device of claim 10 , further comprising an adhesive layer between the first multi-layer structure and the substrate.

15. The light-emitting device of claim 10 , further comprising:

a second multi-layer structure electrically connected to the second connection layer and comprising:

a second lower layer;

a second upper layer; and

a second active layer able to emit light under a bias voltage and between the second lower layer and the second upper layer.

16. The light-emitting device of claim 15 , further comprising a trench between the second thick layer and the second multi-layer structure.

17. The light-emitting device of claim 10 , further comprising:

a first thick layer associated with the first multi-layer structure; and

a first connection layer associated with the first thick layer.

18. The light-emitting device of claim 17 , further comprising a trench between the first thick layer and the first multi-layer structure.

19. A light-emitting device, comprising:

a first multi-layer structure comprising:

a first lower layer;

a first upper layer; and

a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer;

a second thick layer neighboring the first multi-layer structure;

a second connection layer associated with the second thick layer;

a connective line electrically connected to the second connection layer and the first multi-layer structure;

a dielectric layer between the first multi-layer structure and the second connection layer; and

a substrate under the dielectric layer.

20. A light-emitting device, comprising:

a first multi-layer structure comprising:

a first lower layer;

a first upper layer; and

a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer;

a second thick layer neighboring the first multi-layer structure and having an elevation substantially equal to that of the first multi-layer structure;

a second connection layer associated with the second thick layer;

a connective line bridging a lower portion between the first multi-layer structure and the thick layer; and

a substrate under the lower portion.