Method of manufacturing semiconductor device, and semiconductor device
View Patent ↗A method of manufacturing a semiconductor device which includes step of forming a lower resist film over an insulating interlayer; forming a first opening having a circular geometry in a plan view, and second to fifth openings arranged respectively on four sides of the first opening, in the lower resist film; and etching the film-to-be-etched while using the lower resist film as a mask, wherein in the step of etching the film-to-be-etched, a hardened layer is formed in a region of the lower resist film fallen between the first opening and each of the second to fifth openings, and the film-to-be-etched is etched while using the hardened layers as a mask, so as to form a contact hole having a rectangular geometry in a plan view in the film-to-be-etched at a position correspondent to the first opening of the lower resist film.
1. A method of manufacturing a semiconductor device comprising:
forming a resist film over a film-to-be-etched formed over a substrate;
forming a first opening having a circular geometry in a plan view, and second to fifth openings arranged respectively on four sides of said first opening, in said resist film; and
etching said film-to-be-etched while using said resist film as a mask,
wherein in said etching said film-to-be-etched, a hardened layer is formed in a region of said resist film fallen between said first opening and each of said second to fifth openings, and said film-to-be-etched is etched while using said hardened layers as a mask, so as to form a contact hole having a rectangular geometry in a plan view in said film-to-be-etched at a position correspondent to said first opening of said resist film.
2. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said resist film is a lower resist film of a multilayer resist film composed of the lower resist film, an intermediate insulating film and an upper resist film formed in this order,
said forming said resist film further includes forming said lower resist film, said intermediate insulating film and said upper resist film in this order over said film-to-be-etched,
said forming said first to fifth openings in said resist film further comprises:
forming openings having the same geometries with those of said first to fifth openings in said upper resist film;
patterning said intermediate insulating film while using said upper resist film as a mask; and
forming said first to fifth openings in said lower resist film while using at least said intermediate insulating film as a mask.
3. The method of manufacturing a semiconductor device as claimed in claim 2 ,
wherein said multilayer resist film further contains an anti-reflective film formed between said intermediate insulating film and said upper resist film, and
said forming said resist film further contains forming said anti-reflective film on said intermediate insulating film, and said upper resist film is formed on said anti-reflective film.
4. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein in said etching said film-to-be-etched, an etching gas containing C 5 H 8 or C 4 F 6 is irradiated to said resist film kept exposed to the top surface.
5. The method of manufacturing a semiconductor device as claimed in claim 2 ,
wherein in said etching said film-to-be-etched, an etching gas containing C 5 H 8 or C 4 F 6 is irradiated to said resist film kept exposed to the top surface.
6. The method of manufacturing a semiconductor device as claimed in claim 3 ,
wherein in said etching said film-to-be-etched, an etching gas containing C 5 H 8 or C 4 F 6 is irradiated to said resist film kept exposed to the top surface.
7. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said film-to-be-etched is a silicon oxide film.
8. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said resist film is an i-line resist.