Semiconductor device and layout method thereof
View Patent ↗A semiconductor device includes first lines extending in a first direction and formed in a first wiring layer in a predetermined arrangement order, second lines formed in a second wiring layer different from the first wring layer in the predetermined arrangement order, and contacts electrically connecting between the first lines and the second lines so as to match the arrangement order. In the semiconductor device, at least adjacent two tracks are defined in a linear manner parallel to a second direction perpendicular to the first direction. Then, each of the second lines includes a first line portion extending along one of the two tracks, a second line portion extending along another of the two tracks, and a connection portion connecting between the first and second line portions, while two or more of the contacts are formed at the connection portion.
1. A semiconductor device comprising a multi-level wiring structure including a lower-level wiring layer and an upper-level wiring layer, the multilevel wiring structure comprising:
a first wiring provided as one of the lower-level and upper-level wiring layers, the first wiring running in a first direction;
a second wiring provided as the other of the lower-level and upper-level wiring layers, the second wiring running in a second direction crossing the first direction, bending in the first direction to overlap with a portion of the first wiring, and further bending in the second direction; and
first and second contacts provided to connect first and second parts in the portion of the first wiring respectively to corresponding parts in a portion of the second wiring that overlaps with the portion of the first wiring.
2. The device as claimed in claim 1 , wherein the second direction is substantially perpendicular to the first direction.
3. The device as claimed in claim 1 , wherein the multilevel wiring structure further comprises;
a third wiring provided as the one of the lower-level and upper-level wiring layers, the first wiring running in the first direction in substantially parallel to the first wiring,
a fourth wiring provided as the other of the lower-level and upper-level wiring layers, the fourth wiring running in the second direction in substantially parallel to the second wiring, to pass through the first wiring, bending in the first direction to overlap with a portion of the third wiring, and further bending in the second direction, and
third and fourth contacts provided to connect third and fourth parts in the portion of the third wiring respectively to corresponding parts in a portion of the fourth wiring that overlaps with the portion of the third wiring.
4. The device as claimed in claim 3 , wherein the fourth wiring runs in the second direction substantially parallel to the second wiring with a first pitch, and a gap between the first and second contacts is less than the first pitch.
5. The device as claimed in claim 3 , wherein the fourth wiring runs in the second direction substantially parallel to the second wiring with a first pitch, and a gap between the first and second contacts is substantially equal to the first pitch.
6. The device as claimed in claim 1 , wherein the multilevel wiring structure further comprises an additional wiring layer formed above the upper-level wiring layer, a third wiring provided as the additional wiring layer, the third wiring runs straight in the second direction to overlap with a portion of the second wiring.
7. A device comprising
an array portion including a word line that is elongated in a first direction, a bit line that is elongated in a second direction crossing the first direction, and a memory cell arranged on an intersection of the word line and the bit line;
a first area arranged so as to be adjacent to the array portion in the second direction;
a row decoder arranged in the first area;
first and second wiring layers formed over the first area, the second wiring layer being formed above the first wiring layer; and
a first signal passage connected between the row decoder and the word line, the first signal passage including a first line that is formed in the first wiring layer and is elongated in the second direction, a second line that is formed in the second wiring layer, and a plurality of first contacts formed between the first and the second lines, the second line further including first and second portions that are elongated in the first direction and a first connection portion that is elongated in the second direction, the first connection portion of the second line being coupled to the first portion of the second line at one end thereof and being coupled to the second portion of the second line at the other end thereof, the second line of the first signal passage being in contact with the first contacts of the first signal passage at the first connection portion thereof.
8. The device as claimed in claim 7 , further comprising;
a second area arranged so as to be adjacent to the array portion in the first direction,
a column decoder arranged in the second area, and
a second signal passage connected between the column decoder and the bit line, the second signal passage including a third line that is formed in the first wiring layer and is elongated in the second direction, a fourth line that is formed in the second wiring layer, and a plurality of second contacts formed between the third and the fourth lines, the fourth line further including third and fourth portions that are elongated in the first direction and a second connection portion that is elongated in the second direction, the second connection portion of the fourth line being coupled to the third portion of the fourth line at one end thereof and being coupled to the fourth portion of the fourth line at the other end thereof, the fourth line of the second signal passage being in contact with the second contacts of the second signal passage at the second connection portion thereof.
9. The device as claimed in claim 7 , wherein the second direction is substantially perpendicular to the first direction.