Thyristor-based memory array having lines with standby voltages
View Patent ↗A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The new memory cell can be connected to word, bit, and control lines in several ways to form different memory arrays. Timing and voltage levels of word, bit and control lines are disclosed.
1. A memory array comprising:
at least one word line;
at least one bit line;
at least one third line;
at least one thyristor having an anode, a cathode, and at least one base region, the anode being connected to one of the at least one word line, bit line and third line, the cathode being connected to another of the at least one word line, bit line, and third line, and the at least one base region being capacitively coupled to a remaining one of the at least one word line, bit line and third line;
at least one word line controller;
at least one bit line controller;
at least one third line controller;
wherein the anode and the cathode are at least at substantially the same voltage during standby;
wherein the voltage during standby for the anode is provided from one of the at least one word line controller and the at least one bit line controller; and
wherein the voltage during standby for the cathode is provided from a remaining one of the at least one word line controller and the at least one bit line controller.
2. The memory array of claim 1 wherein the anode is connected to the at least one bit line, the cathode is connected to the at least one word line, and the at least one base region is capacitively coupled to the at least one third line.
3. The memory array of claim 2 wherein the at least one thyristor has a first and a second state, and the at least one third line is pulsed during a write operation for at least one of the states.
4. The memory array of claim 3 wherein the at least one word line changes from its standby voltage during the write operation and the at least one bit line changes from its standby voltage during the write operation for only one of the states.
5. The memory array of claim 2 wherein the at least one word line changes from its standby voltage during a read operation.
6. The memory array of claim 1 wherein the anode is connected to the at least one word line, the cathode is connected to the at least one bit line, and the at least one base region is capacitively coupled to the at least one third line.
7. The memory array of claim 6 wherein the at least one thyristor has a first and a second state, and the at least one third line is pulsed during a write operation for at least one of the states.
8. The memory array of claim 7 wherein the at least one word lien changes from its standby voltage during the write operation and the at least one bit line changes from its standby voltage during the write operation for only one of the states.
9. The memory array of claim 6 wherein the at least one word line changes from its standby voltage during a read operation.
10. A memory array comprising:
at least one word line;
at least one bit line;
at least one third line;
at least one thyristor having an anode, a cathode, and at least one base region, the anode being connected to one of the at least one word line, bit line and third line, the cathode being connected to another of the at least one word line, bit line, and third line, and the at least one base region being capacitively coupled to a remaining one of the at least one word line, bit line, and third line;
at least one word line controller;
at least one bit line controller;
at least one third line controller; and
wherein the remaining one of the at least one word line, bit line and third line has a negative voltage value during standby.
11. The memory array of claim 10 wherein the anode is connected to the at least one bit line, the cathode is connected to the at least one word line, and the at least one base region is capacitively coupled to the at least one third line.
12. The memory array of claim 11 wherein the at least one thyristor has a first and a second state, and the at least one third line is pulsed during a write operation for at least one of the states.
13. The memory array of claim 12 wherein the at least one word line changes from its standby voltage during the write operation and the at least one bit line changes from its standby voltage during the write operation for only one of the states.
14. The memory array of claim 11 wherein the at least one word line changes from its standby voltage during a read operation.
15. The memory array of claim 10 wherein the anode is connected to the at least one word line, the cathode is connected to the at least one bit line, and the at least one base region is capacitively coupled to the at least one third line.
16. The memory array of claim 15 wherein the at least one thyristor has a first and a second state, and the at least one third line is pulsed during a write operation for at least one of the states.
17. The memory array of claim 16 wherein the at least one word line changes from its standby voltage during the write operation and the at least one bit line changes from its standby voltage during the write operation for only one of the states.
18. The memory array of claim 15 wherein the at least one word line changes from its standby voltage during a read operation.