Method of opening pad in semiconductor device
View Patent ↗A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on the pad may be removed by heating with molecular vibration and/or microwaves, which may substantially prevent and/or minimize corrosion.
1. A method comprising:
forming a protective film over a pad;
opening the pad by etching the protective film using a pad opening pattern as a mask; and
dielectric heating the opened pad.
2. The method of claim 1 , wherein the dielectric heating uses microwaves.
3. The method of claim 2 , wherein the microwaves have a frequency in a range of approximately 890 MHz to approximately 930 MHz.
4. The method of claim 2 , wherein the microwaves have a frequency in a range of approximately 2425 MHz to approximately 2475 MHz.
5. The method of claim 1 , wherein:
the dielectric heating is directly applied to the molecules of a residual organic material containing C and F groups after etching; and
the dielectric heating heats and resolves the organic material, such that the organic material are removed in the form of at least one of CO 2 , H 2 O, HF, and C x F y gas.
6. The method of claim 1 , wherein the pad comprises aluminum (Al).
7. The method of claim 1 , wherein the protective film comprises at least one of silicon nitride (SiN), silicon oxide (SiO 2 ), and silicon oxynitride (SiON).
8. The method of claim 1 , wherein the protective film comprises a single layer.
9. The method of claim 1 , wherein the protective film comprises multiple layers.
10. The method of claim 1 , wherein the protective film is etched using a C x F y -based gas.
11. An apparatus comprising a protective film formed over a pad, wherein the pad is opened by etching the protective film using a pad opening pattern as a mask and dielectric heating the opened pad.
12. The apparatus of claim 11 , wherein the dielectric heating uses microwaves.
13. The apparatus of claim 12 , wherein the microwaves have a frequency in a range of approximately 890 MHz to approximately 930 MHz.
14. The apparatus of claim 12 , wherein the microwaves have a frequency in a range of approximately 2425 MHz to approximately 2475 MHz.
15. The apparatus of claim 11 , wherein:
the dielectric heating is directly applied to the molecules of a residual organic material containing C and F groups after etching; and
the dielectric heating heats and resolves the organic material, such that the organic material are removed in the form of at least one of CO 2 , H 2 O, HF, and C x F y gas.
16. The apparatus of claim 11 , wherein the pad comprises aluminum (Al).
17. The apparatus of claim 11 , wherein the protective film comprises at least one of silicon nitride (SiN), silicon oxide (SiO 2 ), and silicon oxynitride (SiON).
18. The apparatus of claim 11 , wherein the protective film comprises a single layer.
19. The apparatus of claim 11 , wherein the protective film comprises multiple layers.
20. The apparatus of claim 11 , wherein the protective film is etched using a C x F y -based gas.