Semiconductor device and manufacturing method thereof
View Patent ↗An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.
1. A method of manufacturing a semiconductor device, the method comprising;
forming an oxide semiconductor layer;
forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising an alloy of first and second elements, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;
forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and
oxidizing the first element near an interface region between the first conductive layer and the oxide semiconductor layer.
2. The method of claim 1 , wherein oxidizing the first element comprises heat treating the first element.
3. The method of claim 1 , oxidizing the first element comprises irradiating the first element with a laser.
4. The method of claim 1 , wherein the first element comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, and W.
5. The method of claim 1 , wherein the oxide semiconductor layer comprises at least one of zinc oxide, cadmium oxide, indium oxide, tin oxide, and hafnium oxide.
6. The method of claim 1 , wherein the oxide semiconductor layer comprises at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, B, Ga, In, Ti, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, CI, Br, and I.
7. A method of manufacturing a semiconductor device, the method comprising;
forming an oxide semiconductor layer over a substrate;
forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising an alloy of first and second elements, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;
forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and
oxidizing the first element near a region of interface between the first conductive layer and the oxide semiconductor layer;
forming an insulating layer on the second conductive layer; and
forming a gate electrode on the insulating layer,
wherein the gate electrode comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, Nb, and W.