Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
View Patent ↗Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
1. A method for selective oxidation of silicon on a substrate in the presence of other materials, comprising:
placing the substrate having silicon in a vacuum processing chamber;
generating a plasma remotely from the substrate, such that no part of the plasma touches the substrate;
injecting into the plasma H2 and O2 gases;
providing flow path for radicals from the plasma to reach the substrate; and,
preventing ions from reaching the substrate;
to thereby oxidize the silicon and grow a layer of silicon oxide from the silicon.
2. The method of claim 1 , wherein the concentration of H2 to total gas flow is limited to at least 60%.
3. The method of claim 2 , wherein the concentration of H2 flow to total gas flow is limited to less than 85%.
4. The method of claim 1 , wherein the concentration of H2 flow to total gas flow is limited to between 60% and 85%.
5. The method of claim 1 , further comprising illuminating the substrate with a UV source.
6. The method of claim 5 , further comprising injecting steam into the plasma.
7. The method of claim 1 , further comprising injecting steam into the plasma.
8. The method of claim 7 , further comprising injecting H2 in an amount that is between 50% to 90% of the total gas flow.
9. A method for selective oxidation of silicon on a substrate in the presence of tungsten, titanium nitride, tantalum nitride, or tungsten nitride, comprising:
providing a substrate having exposed silicon and at least one of tungsten, titanium nitride, tantalum nitride, or tungsten nitride;
placing the substrate in a vacuum processing chamber;
generating a plasma remotely from the substrate, such that charged particles from the plasma are substantially prevented from reaching the substrate;
injecting into the plasma H2 and at least one of O2 gas or H2O steam;
providing flow path for radicals from the plasma to reach the substrate;
to thereby selectively oxidize the silicon and grow a layer of silicon oxide from the silicon without oxidizing the tungsten, titanium nitride, tantalum nitride, or tungsten nitride.
10. The method of claim 9 , comprising injecting into the plasma O2 gas in an amount such that the concentration of H2 to total gas flow is between 60% to 85%.
11. The method of claim 9 , comprising injecting into the plasma H2O steam in an amount such that the concentration of H2 to total gas flow is between 50% to 90%.