Method for fabricating MIM structure capacitor

1. A method for fabricating a metal/insulator/metal structure capacitor including:

forming a nitride film insulating layer over a bottom electrode metal layer;

forming titanium/titanium nitride as a top electrode metal layer over the nitride film;

coating photo-resist over the top electrode metal layer and patterning a photo-resist layer;

selectively etching the top electrode metal layer and the nitride film through a chemical dry etching process using the patterned photo-resist layer as an etching mask, wherein the nitride film is etched by a predetermined portion of its entire thickness; and

removing a remaining portion of the nitride film by a wet etching process.

2. The method according to claim 1 , wherein selectively etching the top electrode metal layer includes using the nitride film as an end point.

3. The method according to claim 1 , wherein selectively etching the top electrode metal layer comprises etching the nitride film by between about 9 to about 11% of its entire thickness.

4. The method according to claim 1 , wherein the nitride film is removed by H 3 PO 4 .

5. A method for fabricating a metal/insulator/metal structure capacitor including:

forming a first metal layer over a semiconductor substrate;

forming a dielectric layer over the first metal layer;

forming a second metal layer over the dielectric layer;

forming a mask over the second metal layer;

etching the second metal layer and performing a first etching on the dielectric layer to remove the dielectric layer by a predetermined portion of its entire thickness using the etching mask, wherein the first etching is a chemical dry etching process; and

performing second etching on the dielectric layer to remove a remaining portion of the dielectric layer, wherein the second etching is a wet etching process.

6. The method according to claim 5 , wherein the second metal layer comprises a titanium/titanium nitride film.

7. The method according to claim 5 , wherein the dielectric layer on which the first etching is performed includes a step structure.

8. The method according to claim 5 , wherein performing the second etching on the dielectric layer comprises etching the dielectric layer using H 3 PO 4 .

9. The method according to claim 5 , wherein the first etching process includes etching the nitride film by between about 9 to about 11% of its entire thickness.

10. The method according to claim 5 , wherein the dielectric layer comprises a nitride film.

11. The method according to claim 5 , wherein the first metal layer includes at least one titanium/titanium nitride film.

12. The method according to claim 5 , wherein the first metal layer includes at least a pair of titanium/titanium nitride films.

13. The method according to claim 12 , wherein the first metal layer includes a sandwiched metal layer between the at least a pair of titanium/titanium nitride films.

14. The method according to claim 5 , wherein the first metal layer has a thickness of about 5000Å.

15. The method according to claim 5 , wherein the dielectric layer has a thickness of about 550Å.

16. The method according to claim 5 , wherein the second metal layer has a thickness of about 2000Å.

17. A method for fabricating a metal/insulator/metal structure capacitor comprising:

forming a nitride film insulating layer over a bottom electrode metal layer;

forming titanium/titanium nitride as a top electrode metal layer over the nitride film;

coating photo-resist over the top electrode metal layer and patterning a photo-resist layer;

selectively etching the top electrode metal layer and etching the nitride film by between about 9-11% of its entire thickness using a chemical dry etching process and using the patterned photo-resist layer as an etching mask; and then

removing the at least a portion of the nitride film remaining using a wet etching process.