IP Library › Granted Patent US 8,283,111
Granted Patent B2
US 8,283,111 · App. 12/334,852 · Granted Oct 9, 2012

Method for creating gray-scale features for dual tone development processes

Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 8,283,111
App. No.
12/334,852
Granted
Oct 9, 2012
Kind
B2
Abstract

A method of patterning a substrate using a dual-tone development process is described. The patterning method comprises forming a layer of radiation-sensitive material on a substrate, wherein the layer of radiation-sensitive material comprises a dual tone resist. Thereafter, the patterning method comprises performing one or more exposures of the layer of radiation-sensitive material to one or more patterns of radiation, wherein at least one of the one or more exposures comprises using a mask having a dual-tone mask pattern region configured for printing dual tone features and a half-tone mask pattern region configured for printing half-tone features. Furthermore, the half-tone mask pattern region is optimized for use with the dual tone resist.

Claims (15)

1. A method of patterning a substrate using a dual-tone development process, comprising:

providing a substrate having a layer of radiation-sensitive material on said substrate, wherein said layer of radiation-sensitive material comprises a dual tone photo-resist;

providing a mask having a dual-tone mask pattern region configured for printing dual-tone features and a half-tone mask pattern region configured for printing half-tone features;

performing a dual-tone development process by performing one or more exposures of said layer of radiation-sensitive material to one or more patterns of radiation to print said dual-tone features in said dual tone photo-resist with a double pattern in said dual-tone mask pattern region and print half-tone features in said dual tone photo-resist without a double pattern in said half-tone mask pattern region; and

selecting mask properties of said half-tone mask pattern region for use with said dual tone photo-resist such that said dual-tone development process avoids producing pattern defects that include an undesirable void in half-tone features printed by said dual-tone development process.

2. The method of claim 1 , wherein said selecting mask properties comprises determining an optimal transmission of said half-tone mask pattern region.

3. The method of claim 1 , wherein said half-tone mask pattern region comprises an opaque region having a plurality of sub-resolution transparent features.

4. The method of claim 3 , wherein said selecting mask properties comprises determining an optimal geometry of said plurality of sub-resolution transparent features as a function of exposure conditions and proximity environments using simulation, or experiment, or both.

5. The method of claim 3 , wherein said selecting mask properties comprises determining an optimal size of each of said plurality of sub-resolution transparent features, or an optimal spacing of each of said plurality of sub-resolution transparent features, or both the optimal size and spacing of said plurality of sub-resolution transparent features.

6. The method of claim 3 , wherein each of said plurality of sub-resolution transparent features comprises any arbitrary shape.

7. The method of claim 1 , wherein said half-tone mask pattern region comprises a sub-resolution grating.

8. The method of claim 7 , wherein said selecting mask properties comprises determining an optimal geometry of said sub-resolution grating as a function of exposure conditions and proximity environments using simulation, or experiment, or both.

9. The method of claim 8 , wherein said selecting mask properties comprises determining an optimal pitch for said sub-resolution grating, an optimal size for said sub-resolution grating, an optimal duty-cycle for said sub-resolution grating, or an optimal mask edge offset for said sub-resolution grating, or any combination of two or more thereof.

10. The method of claim 1 , wherein said dual-tone photo-resist comprises a photo-resist that switches solubility due to a change in polarity upon said exposing to said one or more patterns of radiation and optionally elevating a temperature of said substrate to a first post-exposure temperature, or a second post-exposure temperature, or both following said exposing.

11. The method of claim 1 , wherein said dual-tone photo-resist comprises a photo-resist that provides acid-catalyzed deprotection upon said exposing to said one or more patterns of radiation and optionally elevating a temperature of said substrate to a first post-exposure temperature, or a second post-exposure temperature, or both following said exposing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2009
From: FONSECA, CARLOS A.; SOMERVELL, MARK; SCHEER, STEVEN
To: TOKYO ELECTRON LIMITED
Reel/Frame 022132/0376 →
Continuity (3)
Provisional Application 61097560 · Sep 17, 2008
Provisional Application 61098723 · Sep 19, 2008
Related Publication 20100068654A1 · Mar 18, 2010