Semiconductor device
View Patent ↗A dummy transistor and a field effect transistor are arranged in a second direction. The dummy transistor is located at least at one end in a second direction.
1. A semiconductor device comprising:
an element region;
a semiconductor portion;
an array of semiconductor regions including a protruding first semiconductor region extending in a first direction and a plurality of protruding second semiconductor regions extending in the first direction, the first semiconductor region and the second semiconductor regions being periodically arranged in a second direction, the first semiconductor region making up a semiconductor region located at the shortest distance from the semiconductor portion in the second direction, in the element region;
a first isolation region formed between the semiconductor portion and the first semiconductor region;
second isolation regions formed between the adjacent first and second semiconductor regions and between the adjacent second semiconductor regions, the second isolation regions being narrower than the first isolation region in the second direction;
a liner film formed on an inner wall of trench making up each of the first and the second isolation regions;
an SOD region formed on the liner film in the trench making up each of the first and the second isolation regions;
a gate electrode including buried portions buried in intermediate portions of the first and the second semiconductor regions in the first direction, and an extending portion coupling the buried portions together and extending over the intermediate portion of each of the first and the second semiconductor regions in the second direction;
a gate insulating film formed in contact with the buried portion of the gate electrode buried in the second semiconductor region; and
a source region and a drain region formed in the second semiconductor region on both sides sandwiching the buried portion of the gate electrode in the first direction,
wherein the second semiconductor region, the gate electrode, the gate insulating film, and the source and the drain regions make up a field effect transistor, and
the buried portion of the gate electrode in the first semiconductor region is narrower than the buried portion of the gate electrode in the second semiconductor region in the second direction.
2. The semiconductor device according to claim 1 ,
wherein the gate electrode further extends over the first isolation region.
3. The semiconductor device according to claim 1 ,
wherein each of the first and the second isolation regions further includes an insulating film covering upper parts of the SOD region and the liner film, and
the gate electrode is formed by etching the first and the second semiconductor regions without exposing the SOD region and the liner film in the first and the second isolation regions, and then depositing a gate electrode material.
4. The semiconductor device according to claim 1 ,
wherein each of the first and the second semiconductor regions includes a side portion positioned in the intermediate portion of each of the first and the second semiconductor regions in the first direction and formed opposite a side surface of the buried portion buried in each of the first and the second semiconductor regions parallel to the first direction, and
the gate insulating film is in contact with the side portion of the second semiconductor region.
5. The semiconductor device according to claim 1 , further comprising a capacitor and a bit line connected to the field effect transistor,
wherein the capacitor and the field effect transistor make up a memory cell, and
the semiconductor device makes up a DRAM (Dynamic Random Access Memory).
6. The semiconductor device according to claim 1 ,
wherein the SOD region includes polysilazane.
7. The semiconductor device according to claim 1 ,
wherein the liner film is a silicon nitride film.
8. A semiconductor device comprising:
an array of semiconductor regions including a protruding first semiconductor region extending in a first direction and a plurality of protruding second semiconductor regions extending in the first direction, the first semiconductor region and the second semiconductor regions being arranged in a second direction, the first semiconductor region making up a semiconductor region located at least at one end of the array in the second direction;
a gate electrode including buried portions buried in intermediate portions of the first and the second semiconductor regions in the first direction, and an extending portion coupling the buried portions together and extending over the intermediate portion of each of the first and the second semiconductor regions in the second direction;
a gate insulating film formed in contact with the buried portion of the gate electrode buried in the second semiconductor region; and
a source region and a drain region formed in the second semiconductor region on both sides sandwiching the buried portion of the gate electrode in the first direction,
wherein the second semiconductor region, the gate electrode, the gate insulating film, and the source and the drain regions make up a field effect transistor, and
the buried portion of the gate electrode in the first semiconductor region is narrower than the buried portion of the gate electrode in the second semiconductor region in the second direction.
9. The semiconductor device according to claim 8 , comprising a first isolation region located adjacent to the first semiconductor region and positioned, in the second direction, opposite a side on which the first semiconductor region lies opposite the second semiconductor region,
wherein the first isolation region includes a liner film on an inner wall of a trench making up the first isolation region, and a coating insulating film formed on the liner film in the trench.
10. The semiconductor device according to claim 9 ,
wherein the gate electrode extends so that an end thereof is positioned over the first isolation region.
11. The semiconductor device according to claim 8 ,
wherein each of the first and the second semiconductor regions includes a side portion positioned in the intermediate portion of each of the first and the second semiconductor regions in the first direction and formed opposite a side surface of the buried portion buried in each of the first and the second semiconductor regions parallel to the first direction, and
the gate insulating film is in contact with the side portion of the second semiconductor region.
12. The semiconductor device according to claim 8 , further comprising a capacitor and a bit line connected to the field effect transistor,
wherein the capacitor and the field effect transistor make up a memory cell, and
the semiconductor device makes up a DRAM (Dynamic Random Access Memory).
13. A semiconductor device comprising:
a dummy transistor including a protruding first semiconductor region extending in a first direction;
a protruding second semiconductor region extending in the first direction;
a gate electrode including buried portions buried in intermediate portions of the first and the second semiconductor regions in the first direction, and an extending portion coupling the buried portions together and extending over the intermediate portion of each of the first and the second semiconductor regions in a second direction; and
a field effect transistor including the second semiconductor region, the buried portion of the gate electrode buried in the second semiconductor region, a gate insulating film formed in contact with the buried portion in the second semiconductor region, and a source region and a drain region formed in the second semiconductor region on both sides thereof sandwiching the buried portion of the gate electrode in the first direction,
wherein the dummy transistor and the field effect transistor make up an array arranged in the second direction, and the dummy transistor is located at least at one end of the array in the second direction, and
the buried portion of the gate electrode in the first semiconductor region is narrower than the buried portion of the gate electrode in the second semiconductor region in the second direction.
14. The semiconductor device according to claim 13 ,
wherein the extending portion further extends from over the buried portion in the first semiconductor region along the second direction, in a direction opposite to a direction from the first semiconductor region to the second semiconductor region.
15. The semiconductor device according to claim 13 , further comprising a semiconductor portion formed on a side of first semiconductor region which is located opposite a side thereof on which the first semiconductor region faces the second semiconductor region, the semiconductor portion being insulated from the first semiconductor region.
16. The semiconductor device according to claim 13 , further comprising a capacitor and a bit line connected to the field effect transistor,
wherein the capacitor and the field effect transistor make up a memory cell, and
the semiconductor device makes up a DRAM (Dynamic Random Access Memory).
17. The semiconductor device according to claim 13 ,
wherein each of the first and the second semiconductor regions includes a side portion positioned in the intermediate portion of each of the first and the second semiconductor regions in the first direction and formed opposite a side surface of the buried portion buried in each of the first and the second semiconductor regions parallel to the first direction, and
the gate insulating film is in contact with the side portion of the second semiconductor region.
18. The semiconductor device according to claim 17 , further comprising a capacitor and a bit line connected to the second field effect transistor,
wherein the capacitor and the second field effect transistor make up a memory cell, and
the semiconductor device makes up a DRAM (Dynamic Random Access Memory).
19. A semiconductor device comprising:
an element region including a plurality of field effect transistors including a protruding semiconductor region and a trench-shaped gate electrode buried in the semiconductor region, the field effect transistors being periodically arranged in a second direction,
wherein the trench-shaped gate electrode buried in one or two first field effect transistors among the plurality of field effect transistors positioned at an end of the element region in the second direction are narrower, in the second direction, than the trench-shaped gate electrode buried in the semiconductor region of a second field effect transistor other than the first field effect transistor.
20. The semiconductor device according to claim 19 ,
wherein a source region or a drain region of the first field effect transistor is grounded or fixed at a predetermined potential.