Air gap formation and integration using a patterning cap
Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.
1. A method for patterning a film, comprising:
forming an amorphous carbon mask over a substrate, wherein the substrate comprises a damascene layer including alternating inter-metal dielectric (IMD) and metal interconnect and a cap layer over the damascene layer;
depositing a spacer layer over the amorphous carbon mask;
etching the spacer layer to form a spacer and to expose the amorphous carbon mask;
removing the amorphous carbon mask selectively to the spacer to expose the substrate layer;
depositing a gap fill layer around the spacer to cover the substrate layer but expose the spacer;
removing the spacer to form a gap fill mask over the substrate; and
transferring the pattern of the gap fill mask into the substrate, wherein transferring further comprises:
patterning the cap layer by etching a portion of the cap layer unprotected by the gap fill mask; and
etching at least a portion of the IMD from the damascene layer.
2. The method of claim 1 , wherein:
the spacer layer comprises silicon nitride;
the gap fill layer comprises silicon dioxide;
the cap layer comprises silicon carbon nitride; and
the IMD comprises at least one of: amorphous carbon, carbon-doped silicon dioxide, or polymer dielectrics.
3. The method of claim 1 , wherein the cap layer is etched with substantially the same etch process employed to remove the spacer selectively to the gap fill layer.
4. The method of claim 1 , wherein etching the IMD undercuts the patterned cap layer.
5. The method of claim 1 , further comprising:
conformally depositing a dielectric to close an opening in the patterned cap layer and to seal an air gap where the IMD was etched.
6. The method of claim 5 , wherein the patterned cap layer is sealed with a layer comprising silicon carbon nitride.
7. The method of claim 5 , further comprising:
before sealing the air gap, conformally depositing a passivation layer on the sidewalls of the metal interconnect exposed by the IMD etching.
8. The method of claim 1 , wherein etching at least a portion of the IMD from the damascene layer further comprises:
etching the IMD selectively to a dielectric liner adjacent to a sidewall of the metal interconnect of the damascene layer.
9. The method of claim 1 , wherein the metal interconnect further comprises a pair of metal lines with a space there between in which the IMD is disposed, and wherein the gap fill mask defines a pattern edge spanning the space between the pair of metal lines and extending over at least a portion of one of the metal lines.
10. The method of claim 1 , wherein etching the IMD comprises dry etch process employing at least one of: hydrogen (H 2 ), ammonia (NH 3 ) or forming gas, or a wet etch process comprising hydrofluoric acid (HF) or isopropyl alcohol (IPA).
11. A method for forming air gaps in a damascene structure, comprising:
forming a damascene layer including an inter-metal dielectric (IMD) between two metal interconnect lines, each having a line length that is significantly longer than a line width;
forming a cap layer over the damascene layer;
forming an amorphous carbon mask defining a line over the cap layer, the amorphous carbon mask line with a length that is significantly longer than a width and the length non-parallel to the length of the two metal interconnect lines;
forming a spacer on opposite sidewalls of the amorphous carbon mask line;
removing the amorphous carbon mask line selectively to the spacer to form a pair of spacers, each with a length that is significantly longer than a width and the length non-parallel to the length of the two metal interconnect lines;
depositing a gap fill layer around the pair of spacers to cover the cap layer but expose the spacers;
removing the pair of spacers selectively to the gap fill layer to form a gap fill mask having a channel with a length that is significantly longer than a channel width, the channel length non-parallel to the two metal interconnect lines over the substrate;
transferring the channel into the cap layer to expose the IMD between the two interconnect lines; and
removing at least a portion of the IMD from between the two interconnect lines, undercutting the cap layer to form the air gaps.
12. The method of claim 11 , wherein the two interconnect lines are space apart by no more than 65 nm and the channel is transferred into the cap layer approximately orthogonally to a length of this space, the channel having a width between about 10 nm and about 20 nm.
13. The method of claim 11 , wherein:
the cap layer comprises silicon carbon nitride with a thickness between about 5 nm to about 50 nm;
the spacer layer has a thickness of between 10 nm and 50 nm and comprises at least one of: silicon nitride, amorphous silicon or poly-crystalline silicon; and
the gap fill layer comprises at least one of: silicon dioxide, or carbon-doped silicon oxide.
14. The method of claim 11 , wherein the damascene layer further comprises an inter-level dielectric (ILD) layer below the IMD and removing at least a portion of the IMD also removes at least a portion of the ILD below the IMD.
15. A method for patterning a film, comprising:
forming an amorphous carbon mask over a substrate, wherein the substrate further comprises:
a damascene layer including alternating inter-metal dielectric (IMD) and metal interconnect; and
a cap layer over the damascene layer and under the amorphous carbon mask;
depositing a spacer layer over the amorphous carbon mask;
etching the spacer layer to form a spacer and to expose the amorphous carbon mask;
removing the amorphous carbon mask selectively to the spacer to expose the substrate layer;
depositing a gap fill layer around the spacer to cover the substrate layer but expose the spacer;
removing the spacer selectively to the gap fill layer to form a gap fill mask over the substrate;
patterning the cap layer by etching the cap layer selectively to the gap fill mask; and
etching at least a portion of the IMD from the damascene layer selectively to the patterned cap layer to undercut the patterned cap layer.
16. The method of claim 15 , further comprising:
conformally depositing a dielectric over the patterned cap layer to seal an air gap where the IMD was etched.
17. The method of claim 16 , further comprising:
before sealing the air gap, conformally depositing a passivation layer on the sidewalls of the metal interconnect exposed by the IMD etching.
18. The method of claim 15 , wherein the gap fill mask defines a pattern edge spanning the IMD disposed within a space between a pair of lines in the metal interconnect, the pattern edge further extending over at least a portion of one of the pair of lines.