Method of predicting substrate current in high voltage device
View Patent ↗A method of predicting a substrate current in a high voltage device that may accurately predict substrate current components in each of a first region, a second region, and a third region. This may be accomplished by modeling a substrate current component in a third region, in which an inconsistency may occur when a substrate current in a high voltage device is calculated, for example using BSIM3-based modeling. According to embodiments, a substrate current for a third region may be modeled by an expression with a ternary operator, and the modeled substrate current may be added to a substrate current obtained through BSIM3-based modeling.
1. A method to utilize a computer to predict a substrate current in a device, comprising:
determining whether a drain voltage of the device is equal to or higher than a prescribed first critical value; and then
setting an additional substrate current of the device to zero if the drain voltage is lower than the first critical value; and then
determining whether a gate voltage of the device is equal to or higher than a prescribed second critical value if the drain voltage is equal to or higher than the first critical value; and then
setting the additional substrate current to zero if the gate voltage is lower than the second critical value; and then
setting, by using the computer, the additional substrate current to a value obtained by multiplying a second power of a difference between the second critical value and the gate voltage, the drain voltage, and a proportional constant if the gate voltage is equal to or greater than the second critical value; and then
adding the additional substrate current to a substrate current of the device obtained through MOSFET device modeling,
wherein the first critical value is set to the drain voltage when a change in the substrate current appears, depending on the gate voltage, and
wherein the second critical value is set to the gate voltage when a decreasing substrate current starts to increase.
2. The method of claim 1 , wherein the MOSFET device modeling comprises Berkeley Short-channel IgFET Mode (BSIM3)-based modeling.
3. The method of claim 1 , wherein the first critical value is approximately 8.5V.
4. The method of claim 1 , wherein the second critical value is less than the first critical value.
5. The method of claim 1 , wherein the additional substrate current is determined by the expression ((a)×(V d )×(V g −V gturn ) 2 ), wherein V d is the drain voltage, V g is the gate voltage, V gturn is the gate voltage when a decreasing substrate current starts to increase, and “a” is the proportional constant.
6. The method of claim 1 , wherein the proportional constant is obtained through a preliminary process and listed in a database.
7. The method of claim 1 , wherein the proportional constant is approximately 7e −7 .