Image sensor and method for manufacturing the same
View Patent ↗An image sensor includes a circuitry, a substrate, an electrical junction region, a high concentration first conduction type region, and a photodiode. The circuitry includes a transistor and is formed on and/or over the substrate. The electrical junction region is formed in one side of the transistor. The high concentration first conduction type region is formed on and/or over the electrical junction region. The photodiode is formed over the circuitry.
1. An image sensor comprising:
a circuitry including a transistor over a substrate;
an electrical junction region at one side of the transistor, the electrical junction region comprising a first conduction type ion implantation layer, and a second conduction type ion implantation layer formed on the first conduction type ion implantation layer;
a high concentration first conduction type region formed in the first conduction type ion implantation layer and the second conduction type ion implantation layer; and
a photodiode over the circuitry.
2. The image sensor of claim 1 , wherein the electrical junction region comprises a PN junction.
3. The image sensor of claim 1 , wherein the electrical junction region comprises a PNP junction.
4. The image sensor of claim 1 , wherein the high concentration first conduction type region is at least partially formed over the electrical junction region by an implant.
5. The image sensor of claim 1 , wherein the photodiode comprises:
an intrinsic layer electrically connected to the circuitry; and
a second conduction type conduction layer over the intrinsic layer.
6. The image sensor of claim 2 , wherein the photodiode comprises:
an intrinsic layer electrically connected to the circuitry; and
a second conduction type conduction layer over the intrinsic layer.
7. The image sensor of claim 1 , comprising:
a metal interconnection formed over the high concentration first conduction type region, and electrically coupled with the electrical junction region and the photodiode.
8. The image sensor of claim 7 , comprising:
an interlayer dielectric layer formed over the electrical junction region and the high concentration first conduction type region, and wherein the metal interconnection extends through the interlayer dielectric layer.