Image sensor and method for manufacturing the same
View Patent ↗Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection, readout circuitry, a first substrate, an image sensing device, and a second conduction type interfacial layer. The metal interconnection and the readout circuitry may be formed on and/or over the first substrate. The image sensing device may include a first conduction type conduction layer and a second conduction type conduction layer and may be electrically connected to the metal interconnection. The second conduction type interfacial layer may be formed in a pixel interface of the image sensing device.
1. A device, comprising:
a metal interconnection and a readout circuit over a first substrate;
an image sensing device, including a first conduction type conduction layer and a second conduction type conduction layer, electrically connected to the metal interconnection; and
a second conduction type interfacial layer formed in a pixel interface of the image sensing device and doped with an element of Group III, the second conduction type interfacial layer directly contacting the first conduction type conduction layer and the second conduction type conduction layer of the image sensing device,
wherein the second conduction type interfacial layer is formed over a side surface and an upper surface of the image sensing device.
2. The device of claim 1 , wherein the second conduction type interfacial layer is formed over a side surface of the image sensing device.
3. The device of claim 1 , wherein the readout circuit comprises an electrical junction region in the first substrate.
4. The device of claim 3 , wherein the electrical junction region comprises:
a first conduction type ion implantation region in the first substrate; and
a second conduction type ion implantation region over the first conduction type ion implantation region.
5. The device of claim 4 , comprising a first conduction type connection region electrically connected to the metal interconnection over the electrical junction region.
6. The device of claim 4 , wherein the electrical junction region comprises a PNP junction.
7. The device of claim 4 , comprising a first conduction type connection region spaced apart from the electrical junction region and electrically connected to the metal interconnection.
8. The device of claim 1 , wherein the readout circuit comprises a transistor, and wherein a potential difference exists between a source and a drain at both sides of the transistor.
9. The device of claim 8 , wherein the transistor comprises a transfer transistor, and wherein the source of the transistor has an ion implantation concentration lower than an ion implantation concentration of a floating diffusion region.
10. A method, comprising:
forming a metal interconnection and a readout circuit over a first substrate;
forming an image sensing device including a first conduction type conduction layer and a second conduction type conduction layer over the first substrate;
electrically connecting the metal interconnection to the image sensing device; and
forming a second conduction type interfacial layer doped with an element of Group III in a pixel interface of the image sensing device, the second conduction type interfacial layer directly contacting the first conduction type conduction layer and the second conduction type conduction layer of the image sensing device,
wherein the second conduction type interfacial layer is formed over a side surface and an upper surface of the image sensing device.
11. The method of claim 10 , comprising forming the second conduction type interfacial layer over a side surface of the image sensing device.
12. The method of claim 10 , wherein forming the readout circuit comprises forming an electrical junction region in the first substrate.
13. The method of claim 12 , wherein forming the electrical junction region comprises:
forming a first conduction type ion implantation region in the first substrate; and
forming a second conduction type ion implantation region over the first conduction type ion implantation region.
14. The method of claim 13 , comprising forming a first conduction type connection region connected to the metal interconnection over the electrical junction region.
15. The method of claim 14 , wherein the first conduction type connection region is formed after performing a contact etch of the metal interconnection.
16. The method of claim 13 , comprising forming a first conduction type connection region spaced apart from the electrical junction region and electrically connected to the metal interconnection.
17. The method of claim 16 , wherein the first conduction type connection region contacts a device isolation region and is connected to the electrical junction region.