CMOS image sensor and method for manufacturing the same

1. A CIS (complementary metal oxide silicon image sensor) comprising:

an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;

a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other;

a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and

a microlens formed on each of the plurality of color filters.

2. The CIS according to claim 1 , wherein the plurality of color filters comprise a red color filter, a green color filter, and a blue color filter.

3. The CIS according to claim 2 , wherein the metal sidewall is formed on side surfaces of the green color filter.

4. The CIS according to claim 1 , wherein the metal sidewall is formed of an opaque metal.

5. The CIS according to claim 4 , wherein the opaque metal is one selected from the group consisting of Al, Cr, Mo, and Ti.

6. The CIS according to claim 1 , further comprising a planarization layer on an entire upper surface of the substrate including the plurality of color filters.

7. A CIS (complementary metal oxide silicon image sensor) comprising:

an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;

a first color filter formed on the interlayer insulation layer;

metal sidewalls formed on side surfaces of the first color filter;

a second color filter formed at one side of the first color filter with the metal sidewall interposed between the first color filter and the second color filter;

a third color filter formed on another side of the first color filter with the metal sidewall interposed between the first color filter and the third color filter; and

microlenses formed on the first, second, and third color filters.

8. The CIS according to claim 7 , wherein the first color filter is a green color filter.