Semiconductor device
View Patent ↗The present invention provides a semiconductor device exhibiting an improved reliability of a bump coupling section. A semiconductor device is provided, which comprises: an interconnect layer; a stress-relaxing layer, covering the interconnect layer and provided with an opening exposing at least a portion of the interconnect layer; a post, covering the opening and provided so as to overlap with the stress-relaxing layer disposed around the opening; and a resin layer, provided around the post to cover the stress-relaxing layer, wherein a value of 2A/C is within a range of from 0.1 to 0.5, wherein C is a diameter of the post and 2A is a width of an overlapping region of the stress-relaxing layer with the post.
1. A semiconductor device, comprising:
an interconnect layer;
a stress-relaxing layer, covering said interconnect layer and provided with an opening exposing at least a portion of said interconnect layer;
a post, covering said opening and provided so as to overlap with the stress-relaxing layer disposed around said opening; and
a resin layer, provided around said post to cover said stress-relaxing layer,
wherein a value of 2A/C is within a range of from 0.1 to 0.5,
wherein C is a diameter of said post and 2A is a width of an overlapping region of said stress-relaxing layer with said post.
2. The semiconductor device according to claim 1 , further comprising an under-bump metal layer between said opening and said post and between said stress-relaxing layer and said post.
3. The semiconductor device according to claim 2 , wherein said under-bump metal layer contains at least one selected from a group consisting of titanium (Ti), copper (Cu) and nickel (Ni).
4. The semiconductor device according to claim 1 , wherein said post contains copper (Cu).
5. The semiconductor device according to claim 1 , further comprising a solder ball provided on said post.
6. The semiconductor device according to claim 1 , wherein said stress-relaxing layer has a thermal expansion coefficient of within a range of from 5 ppm/degree C. to 10 ppm/degree C. and a Young's modulus of within a range of from 30 GPa to 100 GPa.
7. The semiconductor device according to claim 6 , wherein said stress-relaxing layer includes at least one selected from the group consisting of phosphosilicate glass (PSG) and borophosphosilicate glass (BPSG).
8. The semiconductor device according to claim 1 , wherein the value of 2A is within a range of from 50 μm to 200 μm.
9. The semiconductor device according to claim 1 , further comprising an electroconductive cap, wherein
said electroconductive cap is provided in a side of said semiconductor device opposite to the side having said post formed therein.
10. The semiconductor device according to claim 1 , wherein said resin layer covers the side wall of said post, and
wherein a surface of said post opposite to the side of said interconnect layer and a surface of said resin layer opposite to the side of said interconnect layer is coplanar.