Passive electrical devices and methods of fabricating passive electrical devices
A thin laminate passive electrical device, such as, a capacitor, and a method of fabricating a thin laminate passive electrical device are provided. The passive electrical device includes two conductors, for example, copper foil conductors, separated by a dielectric having a first layer of a first material having a softening point temperature greater than a first temperature and a first layer of a second material having a softening point temperature less than the first temperature. The first temperature may be at least 150 degrees C. or higher. By providing a first layer having a higher softening point material, shorting across the conductors, that can be promoted by the fabrication process, is prevented. Methods of fabricating passive electrical devices are also disclosed.
1. A thin laminate capacitive device comprising:
a first conductor;
a first layer of a first insulating material adjacent to the first conductor, the first insulating material of the first layer having a softening point temperature greater than a lamination temperature of the device;
a first layer of a second insulating material adjacent to the first layer of the first insulating material, the second insulating material being different from the first insulating material, having a lower thermal deformation resistance than the first insulating material, and having a softening point temperature less than the lamination temperature of the device, wherein the lamination temperature of the device is 150 degrees C.; and
a second conductor adjacent the first layer of the second insulating material.
2. A thin laminate capacitive device comprising:
a first conductor;
a first layer of a first insulating material adjacent to the first conductor, the first insulating material of the first layer having a softening point temperature greater than a lamination temperature of the device;
a first layer of a second insulating material adjacent to the first layer of the first insulating material, the second insulating material being different from the first insulating material, having a lower thermal deformation resistance than the first insulating material, and having a softening point temperature less than the lamination temperature of the device, wherein the lamination temperature of the device is at least 200 degrees C.; and
a second conductor adjacent the first layer of the second insulating material.
3. The thin laminate capacitive device as recited in claim 2 , wherein the capacitive device comprises a capacitance density of at least 50 pF/cm 2 and a dielectric strength of at least 200 kV/mm.
4. The thin laminate capacitive device as recited in claim 2 , wherein the device further comprises a second layer of the first insulating material between the first layer of the second insulating material and the second conductor.
5. The thin laminate capacitive device as recited in claim 4 , wherein the device further comprises a second layer of the second insulating material between the first layer of the second insulating material and the second conductor.
6. The thin laminate capacitive device as recited in claim 2 , wherein the second conductor is laminated to the first layer of the second insulating material at the lamination temperature of the device.
7. The thin laminate capacitive device as recited in claim 2 , wherein the first insulating material comprises at least one of a thermoplastic polymer and a thermosetting polymer.
8. The thin laminate capacitive device as recited in claim 2 , wherein the first insulating material comprises a polymer comprising at least one of a polyamide, a polyamide-imide, a polyimide, a polymer sulphones, a polyaryl sulfone, a polyphenylene sulfide, a polyetheretherketone, a polyphenyleneoxide, a polybismalimide, an epoxy, a polyester, and a polyurethane.
9. The thin laminate capacitive device as recited in claim 2 , wherein the second insulating material comprises a polymer comprising at least one of an epoxy, a polyimide, a polyamides, a polyamideimide, a polyethersulfone, a polyester, a polybismalemide, an alkyd, a polyurethane, and a bismalemide triazine.
10. The thin laminate capacitive device as recited in claim 2 ,
wherein the first conductor is a first copper foil conductor, the second conductor is a second copper foil conductor, the first insulating material is a first polymer having a softening point temperature greater than 150 degrees C., and the second insulating material is a second polymer having a softening point temperature less than 150 degrees C.;
wherein the first layer of the first polymer is bonded to the first copper foil conductor, the first layer of the second polymer is bonded to the first layer of the first polymer, and the second copper foil is bonded to the first layer of the second polymer; and
wherein the capacitive device comprises a capacitance density of at least 50 pF/cm 2 and a dielectric strength of at least 200 kV/mm.
11. The thin laminate capacitive device as recited in claim 10 , wherein the second polymer comprises at least one of an epoxy, a polyimide, a polyamides, a polyamideimide, a polyethersulfone, a polyester, a polybismalemide, an alkyd, a polyurethane, and a bismalemide triazine.
12. The thin laminate capacitive device as recited in claim 2 , wherein the first polymer comprises at least one of a polyamide, a polyamide-imide, a polyimide, a polymer sulphones, a polyaryl sulfone, a polyphenylene sulfide, a polyetheretherketone, a polyphenyleneoxide, a polybismalimide, an epoxy, a polyester, and a polyurethane.
13. A printed circuit board having the thin laminate capacitive device recited in claim 2 .
14. An electronic device having the printed circuit board recited in claim 13 .
15. The thin laminate capacitive device as recited in claim 2 , wherein the first insulating material comprises a polyamide.
16. The thin laminate capacitive device as recited in claim 2 , wherein the first insulating material comprises a polyamideimide polymer, and the second insulating material comprises an epoxy thermosetting polymer.