Dual high-k oxides with sige channel
View Patent ↗A method and apparatus are described for integrating dual gate oxide (DGO) transistor devices ( 50, 52 ) and core transistor devices ( 51, 53 ) on a single substrate ( 15 ) having a silicon germanium channel layer ( 21 ) in the PMOS device areas ( 112, 113 ), where each DGO transistor device ( 50, 52 ) includes a metal gate ( 25 ), an upper gate oxide region ( 60, 84 ) formed from a second, relatively higher high-k metal oxide layer ( 24 ), and a lower gate oxide region ( 58, 84 ) formed from a first relatively lower high-k layer ( 22 ), and where each core transistor device ( 51, 53 ) includes a metal gate ( 25 ) and a core gate dielectric layer ( 72, 98 ) formed from only the second, relatively higher high-k metal oxide layer ( 24 ).
1. A semiconductor fabrication process comprising:
providing a wafer comprising a first semiconductor layer having a PMOS device area and an NMOS device area;
forming a compressive silicon germanium layer on at least the PMOS device area;
selectively forming a deposited first high-k dielectric layer over the compressive silicon germanium layer, where the first high-k dielectric layer is formed from a first dielectric material which has a first dielectric constant value of 7.0 or greater;
depositing a second high-k dielectric layer over the first high-k dielectric layer in the PMOS device area and over the first semiconductor layer in the NMOS device area, where the second high-k dielectric layer is formed from a second dielectric material which has a dielectric constant value that is higher than the first dielectric constant value; and
depositing one or more gate electrode layers over the second high-k dielectric layer.
2. The semiconductor fabrication process of claim 1 , where providing the wafer comprises providing a first semiconductor layer as a semiconductor-on-insulator (SOI) substrate structure or bulk substrate structure.
3. The semiconductor fabrication process of claim 1 , where forming the compressive silicon germanium layer comprises epitaxially growing silicon germanium to a predetermined thickness.
4. The semiconductor fabrication process of claim 1 , where selectively forming the deposited first high-k dielectric layer comprises depositing a silicate or metal oxy-nitride material.
5. The semiconductor fabrication process of claim 1 , where selectively forming the deposited first high-k dielectric layer comprises depositing a layer of Hf x Si 1-x O y or Hf x Si 1-x O y N z over at least the compressive silicon germanium layer.
6. The semiconductor fabrication process of claim 1 , where selectively forming the deposited first high-k dielectric layer comprises depositing a silicate or metal oxy-nitride material in a deposition process which occurs at a temperature that is selected to reduce or eliminate germanium diffusion from the compressive silicon germanium layer.
7. The semiconductor fabrication process of claim 1 , where selectively forming the deposited first high-k dielectric layer comprises:
blanket depositing the first high-k dielectric layer over the PMOS device area and the NMOS device area;
forming a patterned etch mask to cover the compressive silicon germanium layer in the first PMOS device area; and
selectively etching the first high-k dielectric layer to expose the NMOS device area while leaving the first high-k dielectric layer over the compressive silicon germanium layer.
8. The semiconductor fabrication process of claim 1 , where depositing the second high-k dielectric layer comprises depositing a layer of HfO 2 over the first high-k dielectric layer in the PMOS device area and over the first semiconductor layer in the NMOS device area.
9. A method of forming devices comprising:
forming a first gate dielectric device in a first region of a semiconductor substrate, wherein the first gate dielectric device comprises a first gate dielectric formed by depositing a first high-k dielectric layer and a second high-k dielectric layer over a first channel region of the semiconductor substrate, where the first high-k dielectric layer has a first dielectric constant value that is smaller than a second dielectric constant value for the second high-k dielectric layer; and
forming a second gate dielectric device in a second region of the semiconductor substrate, wherein the second gate dielectric device comprises a second gate dielectric that is thinner than the first gate dielectric and that is formed by depositing the second high-k dielectric layer over a second channel region of the semiconductor substrate.
10. The method of claim 9 , where forming the first gate dielectric device and the second gate dielectric device further comprises depositing a gate electrode material over the second high-k dielectric layer.
11. The method of claim 9 , further comprising epitaxially growing a compressive silicon germanium layer on the first channel region of the semiconductor substrate prior to depositing the first high-k dielectric layer.
12. The method of claim 11 , where forming the first gate dielectric device comprises:
depositing a first high-k dielectric layer of Hf x Si 1-x O y or Hf x Si 1-x O y N z over the compressive silicon germanium layer; and
depositing a second high-k dielectric layer of HfO 2 over the first high-k dielectric layer.
13. The method of claim 12 , where forming the second gate dielectric device comprises depositing the second high-k dielectric layer of HfO 2 over the second channel region.
14. The method of claim 11 , where forming the first gate dielectric device comprises depositing the first high-k dielectric layer as a silicate or metal oxy-nitride material in a deposition process which occurs at a temperature that is selected to reduce or eliminate germanium diffusion from the compressive silicon germanium layer.
15. The method of claim 9 , further comprising epitaxially growing a silicon carbide layer on the first channel region of the semiconductor substrate prior to depositing the first high-k dielectric layer.
16. The method of claim 9 , further comprising:
forming a third gate dielectric device in a third region of the semiconductor substrate, wherein the third gate dielectric device comprises a third gate dielectric formed by depositing the first high-k dielectric layer and the second high-k dielectric layer over a third channel region of the semiconductor substrate; and
forming a fourth gate dielectric device in a fourth region of the semiconductor substrate, wherein the fourth gate dielectric device comprises a fourth gate dielectric that is thinner than the third gate dielectric and that is formed by depositing the second high-k dielectric layer over a fourth channel region of the semiconductor substrate.
17. A method for forming a semiconductor device comprising:
providing a semiconductor substrate comprising first and second device areas;
forming a first high-k dielectric layer over the first device area, where the first high-k dielectric layer has a first dielectric constant value of 7.0 or greater;
forming a second high-k dielectric layer over the first high-k dielectric layer in the first device area and over the semiconductor substrate in the second device area, where the second high-k dielectric layer has a dielectric constant value that is higher than the first dielectric constant value;
forming one or more gate electrode layers over the second high-k dielectric layer; and
selectively etching the one or more gate electrode layers to form one or more gate electrode structures over the first and second device areas.
18. The method of claim 17 , further comprising epitaxially growing a compressive silicon germanium layer on one or more PMOS channel regions of the semiconductor substrate in the first and second device areas prior to forming the first high-k dielectric layer.
19. The method of claim 18 , where forming the first high-k dielectric layer comprises depositing a layer of Hf x Si 1-x O y or Hf x Si 1-x O y N z over at least the compressive silicon germanium layer in a deposition process which occurs at a temperature that is selected to reduce or eliminate germanium diffusion from the compressive silicon germanium layer.
20. The method of claim 17 , where forming the first high-k dielectric layer comprises:
depositing the first high-k dielectric layer as a layer of silicate or metal oxy-nitride over the first and second device areas; and
selectively etching the first high-k dielectric layer from the second device area to expose the semiconductor substrate in the second device area.
21. The method of claim 17 , where forming the second high-k dielectric layer comprises depositing a layer of HfO 2 over the first high-k dielectric layer in the first device area and over the semiconductor substrate in the second device area.
22. The method of claim 17 , where forming the first high-k dielectric layer over the first device area reduces a thickness measure for the first high-k dielectric layer in the first device area that is required to meet a predetermined electrical oxide thickness (Tox) requirement as compared to forming the first high-k dielectric layer with a material having a higher dielectric constant value.
23. A semiconductor fabrication process comprising:
selectively forming a first high-k dielectric layer in a PMOS region of a semiconductor substrate, where the first high-k dielectric layer is formed from a first dielectric material which has a first high-k dielectric constant value; and
forming a second high-k dielectric layer over the first high-k dielectric layer in the PMOS region and over an NMOS region of the semiconductor substrate, where the second high-k dielectric layer is formed from a second dielectric material which has a high-k dielectric constant value that is higher than the first high-k dielectric constant value.
24. The semiconductor fabrication process of claim 23 , further comprising depositing one or more gate electrode layers over the second high-k dielectric layer.
25. The semiconductor fabrication process of claim 24 , further comprising selectively etching the one or more gate electrode layers to form one or more gate electrode structures over the PMOS and NMOS regions.