Vacuum UV based optical measuring method and system
View Patent ↗A method and system are presented for use in optical processing of an article by VUV radiation. The method comprises: localizing incident VUV radiation propagation from an optical head assembly towards a processing site on the article outside the optical head assembly and localizing reflected VUV radiation propagation from said processing site towards the optical head assembly by localizing a medium, non-absorbing with respect to VUV radiation, in within the light propagation path in the vicinity of said site outside the optical head assembly. The level of the medium is controlled by measuring the reflected VUV radiation.
1. A system for processing a semiconductor wafer of a certain diameter, the system comprising:
a stage for supporting the wafer being processed;
an optical system comprising an optical head assembly configured for containing a first medium that is non-absorbing with respect to VUV radiation, the optical head assembly having an optical window for directing VUV radiation from a source of the radiation towards the wafer through said optical window; and
a light guiding assembly for flowing therethrough a second medium, non-absorbing with respect to VUV radiation, said light guiding assembly being accommodated between said optical head assembly and said stage, and comprising a hollow tip forming an entire outer surface of the light guide assembly that faces the wafer at a processing site, said hollow tip defining at least one optical channel operating to receive the VUV radiation from the optical head assembly and guide the VUV radiation towards the processing site on the wafer supported by the stage, the hollow tip having an end formed with an outlet opening located for discharging said second VUV non-absorbing medium,
wherein an outer circumferential dimension of the entire outer surface of the light guide assembly is selected to be smaller than said certain diameter of the wafer being processed.
2. The system of claim 1 , wherein a space defined inside said hollow tip is substantially conically shaped.
3. The system of claim 1 , wherein said stage is configured as one of the following: x-y stage, z-stage, r-θ stage, or any combination thereof.
4. The system of claim 1 , wherein said optical head assembly comprises a sealed enclosure.
5. The system of claim 4 , wherein said sealed enclosure is evacuated.
6. The system of claim 4 , wherein said medium to be supplied into the optical head assembly comprises a VUV non-absorbing gas.
7. The system of claim 1 , wherein said optical system comprises one or more detectors for detecting VUV radiation coming from the wafer.
8. The system of claim 7 , wherein said optical system is configured for normal incidence of the VUV radiation onto the wafer.
9. The system of claim 7 , wherein said optical system is configured for oblique incidence of the VUV radiation onto the wafer.
10. The system of claim 7 , wherein said optical system is configured for spectral measurements.