IP Library › Granted Patent US 8,426,881
Granted Patent B2
US 8,426,881 · App. 12/360,216 · Granted Apr 23, 2013

Light emitting diodes including two reflector layers

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Quick Facts
Patent No.
US 8,426,881
App. No.
12/360,216
Granted
Apr 23, 2013
Kind
B2
Abstract

A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.

Claims (36)

1. A light emitting diode comprising:

a diode region comprising a gallium nitride based n-type layer, an active region on the gallium nitride based n-type layer and a gallium nitride based p-type layer on the active region opposite the gallium nitride based n-type layer;

a first reflector layer that comprises silver on the gallium nitride based p-type layer opposite the active region and oriented to reflect light that emerges from the diode region and impinges on the first reflector layer that comprises silver back towards the diode region; and

a second reflector layer that comprises aluminum on the gallium nitride based n-type layer opposite the active region and oriented to reflect light that emerges from the diode region and impinges on the second reflector layer that comprises aluminum back towards the diode region.

2. A light emitting diode according to claim 1 further comprising:

a first bonding layer on the first reflector layer opposite the gallium nitride based p-type layer; and

a mounting support on the first bonding layer opposite the first reflector layer.

3. A light emitting diode according to claim 1 further comprising:

a second bonding layer on the second reflector layer opposite the gallium nitride based n-type layer; and

a wire bond on the second bonding layer opposite the second reflector layer.

4. A light emitting diode according to claim 2 further comprising:

a second bonding layer on the second reflector layer opposite the gallium nitride based n-type layer; and

a wire bond on the second bonding layer opposite the second reflector layer.

5. A light emitting diode according to claim 1 further comprising:

a bonding layer on the second reflector layer opposite the gallium nitride based n-type layer, wherein the bonding layer and the second reflector layer are congruent to one another.

6. A light emitting diode according to claim 1 wherein the second reflector layer is directly on an underlying layer and wherein the second reflector layer is of smaller area than the underlying layer.

7. A light emitting diode according to claim 1 further comprising:

a bonding layer on the second reflector layer opposite the gallium nitride based n-type layer, wherein the bonding layer and the second reflector layer each comprise a plurality of fingers.

8. A light emitting diode according to claim 1 further comprising:

a bonding layer on the second reflector layer opposite the gallium nitride based n-type layer, wherein the bonding layer and the second reflector layer each comprise a grid.

9. Alight emitting diode according to claim 1 wherein the second reflector layer comprises a plurality of fingers.

10. A light emitting diode according to claim 1 wherein the second reflector layer comprises a grid.

11. A light emitting diode according to claim 5 further comprising:

a wire bond on the bonding layer opposite the second reflector layer.

12. A light emitting diode according to claim 1 further comprising:

a transparent oxide layer between the gallium nitride based p-type layer and the first reflector layer.

13. A light emitting diode according to claim 1 further comprising:

a transparent oxide layer between the gallium nitride based n-type layer and the second reflector layer.

14. A light emitting diode according to claim 12 wherein the transparent oxide layer comprises Indium Tin Oxide (ITO).

15. A light emitting diode according to claim 13 wherein the transparent oxide layer comprises Indium Tin Oxide (ITO).

16. A light emitting diode comprising:

a vertical gallium nitride based light emitting diode structure; and

a pair of reflector layers, a respective one of which is on an opposite side of the vertical gallium nitride based light emitting diode structure, and is oriented to reflect light that emerges from the vertical gallium nitride based light emitting diode structure and impinges on a respective one of the pair of reflective layers back towards the vertical gallium nitride based light emitting diode structure, wherein one of the reflector layers comprises silver and the other of the reflector layers comprises aluminum.

17. A light emitting diode according to claim 16 wherein the pair of reflector layers have different sizes and/or shapes.

18. A light emitting diode according to claim 16 further comprising a mounting support on one of the pair of reflector layers.

19. A light emitting diode according to claim 18 further comprising a wire bond on the other of the pair of reflector layers.

Assignments (2)
RELEASE OF PATENT SECURITY INTEREST RECORDED AT R/F 058983/0001 Recorded Jun 25, 2025
From: CITIZENS BANK, N.A.
To: SMART MODULAR TECHNOLOGIES, INC.; SMART EMBEDDED COMPUTING, INC.; SMART HIGH RELIABILITY SOLUTIONS LLC; CREELED, INC.
Reel/Frame 071725/0207 →
SECURITY INTEREST Recorded Feb 7, 2022
From: SMART MODULAR TECHNOLOGIES, INC.; SMART HIGH RELIABILITY SOLUTIONS, LLC; SMART EMBEDDED COMPUTING, INC.; CREELED, INC.
To: CITIZENS BANK, N.A.
Reel/Frame 058983/0001 →