METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD
A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
1 . A semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer, wherein the interface between said layers contains traces of oxygen as a result of a treatment for avoiding the contamination of said another layer by the doping agent.
2 . The semi-conducting device of claim 1 , wherein the content of oxygen is higher than 10 19 atoms·cm −3 .
3 . A semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer, wherein the interface between said layers contains traces of nitrogen as a result of a treatment for avoiding the contamination of said another layer by the doping agent.
4 . The semi-conducting device of claim 3 , wherein the content of nitrogen is higher than 10 19 atoms·cm −3 .
5 . The semi-conducting device of claim 1 , wherein said treatment comprises dosing a reaction chamber where said doped layer and other layer are deposited, intermediate deposition of the respective layers, with a vapour or gas comprising water, methanol, isopropanol or another alcohol without plasma.
6 . The semi-conducting device of claim 3 , wherein said treatment comprises dosing a reaction chamber where said doped layer and other layer are deposited, intermediate deposition of the respective layers, with a vapour or gas comprising ammonia, hydrazine or volatile organic amines without plasma.
7 . The semi-conducting device of claim 5 , wherein said dosing is performed at around 0.05 to 100 mbar and between 100 and 350° C. for less than 10 minutes.
8 . The semi-conducting device of claim 6 , wherein said dosing is performed at around 0.05 to 100 mbar and between 100 and 350° C. for less than 10 minutes.
9 . The semi-conducting device of claim 1 , wherein the doped layer is a p-doped layer.
10 . The semi-conducting device of claim 1 , wherein the doped layer is a n-doped layer.
11 . The semi-conducting device of claim 3 , wherein the doped layer is a p-doped layer.
12 . The semi-conducting device of claim 3 , wherein the doped layer is a n-doped layer.
13 . The semi-conducting device of claim 1 , further comprising a buffer layer intermediate said doped layer and said other layer.
14 . The semi-conducting device of claim 3 , further comprising a buffer layer intermediate said doped layer and said other layer.
15 . The semi-conducting device of claim 5 , wherein said dosing is followed by the deposition of a buffer layer on said doped layer.
16 . The semi-conducting device of claim 6 , wherein said dosing is followed by the deposition of a buffer layer on said doped layer.
17 . The semi-conducting device of claim 5 , wherein said dosing is followed by said reaction chamber pumping at high vacuum between 100 and 350° C. for less than 5 minutes.
18 . The semi-conducting device of claim 5 , wherein said dosing is followed by said reaction chamber pumping at high vacuum between 100 and 350° C. for less than 5 minutes.
19 . The semi-conducting device of claim 1 , said doped layer being a plasma-deposited doped layer.
20 . The semi-conducting device of claim 3 , said doped layer being a plasma-deposited doped layer.
21 . The semi-conducting device of claim 6 , wherein said doping agent comprises trimethylboron.