POWER MOSFET
A power MOSFET of the invention includes a cell region in which a plurality of cells constituted of a transistor having a gate electrode formed in a trench is aligned, the plurality of cells being arranged to form a square grid and a gate interconnect lead formed so as to extend out of the cell region, with an end portion overlapping an outermost peripheral gate electrode in the cell region for connection.
1 . A power MOSFET comprising:
a cell region in which a plurality of cells constituted of a transistor having a gate electrode formed in a trench is aligned, the plurality of cells being arranged to form a square grid; and
a gate interconnect lead formed so as to extend out of said cell region, with an end portion overlapping an outermost peripheral gate electrode in said cell region for connection.
2 . The power MOSFET according to claim 1 , wherein said gate interconnect lead is formed so as to surround said cell region.
3 . The power MOSFET according to claim 1 , wherein said gate interconnect lead overlaps said outermost peripheral gate electrode for connection, by generally a widthwise half portion of said outermost peripheral gate electrode.
4 . The power MOSFET according to claim 1 , wherein said outermost peripheral gate electrode and said gate interconnect lead are of a same type conductor.
5 . The power MOSFET according to claim 1 , wherein a width of said outermost peripheral gate electrode is in a range of twice to five times of that of other gate electrodes.
6 . The power MOSFET according to claim 5 , wherein a width of said outermost peripheral gate electrode is in a range of 2 to 5 μm.