IP Library Granted Patent US 8,487,291
Granted Patent B2
US 8,487,291 · App. 12/362,640 · Granted Jul 16, 2013

Programmable metallization memory cell with layered solid electrolyte structure

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Quick Facts
Patent No.
US 8,487,291
App. No.
12/362,640
Granted
Jul 16, 2013
Kind
B2
Abstract

Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Claims (20)

1. A programmable metallization memory cell comprising:

an active electrode having an active electrode major surface;

an inert electrode having an inert electrode major surface; and

a variable resistive element between the active electrode and the inert electrode, the variable resistive element comprising a plurality of parallel solid electrolyte layers and a plurality of parallel electrically conductive metal layers, the solid electrolyte layers and the electrically conductive metal layers are parallel to each other and layered in an alternating fashion, the plurality of parallel alternating solid electrolyte layers and electrically conductive layers extend in a non-parallel direction with the active electrode major surface and the inert electrode major surface, and the electrically conductive metal layers comprise an electrochemically inert metal.

2. A programmable metallization memory cell according to claim 1 wherein the plurality of alternating solid electrolyte layers and electrically conductive metal layers extend in an orthogonal direction with respect to the active electrode major surface or the inert electrode major surface.

3. A programmable metallization memory cell according to claim 1 wherein the electrically conductive metal layers have a thickness of less than 100 Angstroms.

4. A programmable metallization memory cell according to claim 1 further comprising a switching layer separating the variable resistive element from either the active electrode or the inert electrode.

5. A programmable metallization memory cell according to claim 1 wherein the electrically conductive metal layers comprise silver or copper.

6. A programmable metallization memory cell according to claim 1 wherein the solid electrolyte layers comprise a chalcogenide material.

7. A programmable metallization cell (PMC) comprising:

an electrochemically active electrode and an inert electrode; and

a variable resistive element separating the electrochemically active electrode from the inert electrode, the variable resistive element comprising a plurality of alternating and parallel solid electrolyte layers and electrically conductive metal layers, the solid electrolyte layers and the electrically conductive metal layers are parallel to each other and layered in an alternating fashion, the electrically conductive metal layers electrically couple the electrochemically active electrode to the inert electrode, and the electrically conductive metal layers directly contact and extend from the electrochemically active electrode and directly contact the inert electrode, in a low resistance state.

8. A PMC according to claim 7 wherein the electrically conductive metal layers are spaced apart by the solid electrolyte layers.

9. A PMC according to claim 7 wherein a surface place of the plurality of alternating solid electrolyte layers and electrically conductive metal layers is orthogonal to a surface plane of the active electrode or the inert electrode.

10. A PMC according to claim 9 wherein the electrochemically active electrode and the inert electrode are parallel.

11. A PMC according to claim 7 wherein the electrically conductive metal layers have a thickness of less than 100 Angstroms.

12. A PMC according to claim 7 further comprising a switching layer separating the variable resistive element from either the electrochemically active electrode or the inert electrode, wherein the switching layer is a composite of conductive and insulative material containing localized regions of higher current densities.

13. A PMC according to claim 12 wherein the switching layer comprises a solid electrolyte.

14. A PMC according to claim 7 wherein the electrically conductive metal layers comprise silver or copper.

15. A PMC according to claim 7 wherein the electrically conductive metal layers comprise an electrochemically inert metal.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Jul 23, 2025
From: THE BANK OF NOVA SCOTIA
To: SEAGATE TECHNOLOGY PUBLIC LIMITED COMPANY; SEAGATE TECHNOLOGY; SEAGATE TECHNOLOGY HDD HOLDINGS; I365 INC.; SEAGATE TECHNOLOGY LLC; SEAGATE TECHNOLOGY INTERNATIONAL; SEAGATE HDD CAYMAN; SEAGATE TECHNOLOGY (US) HOLDINGS, INC.
Reel/Frame 072193/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Jul 19, 2013
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE
To: SEAGATE TECHNOLOGY LLC; EVAULT INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY INTERNATIONAL; SEAGATE TECHNOLOGY US HOLDINGS, INC.
Reel/Frame 030833/0001 →
SECURITY AGREEMENT Recorded Mar 24, 2011
From: SEAGATE TECHNOLOGY LLC
To: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
Reel/Frame 026010/0350 →
RELEASE Recorded Jan 19, 2011
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: SEAGATE TECHNOLOGY HDD HOLDINGS; MAXTOR CORPORATION; SEAGATE TECHNOLOGY LLC; SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 025662/0001 →
SECURITY AGREEMENT Recorded May 15, 2009
From: MAXTOR CORPORATION; SEAGATE TECHNOLOGY LLC; SEAGATE TECHNOLOGY INTERNATIONAL
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT AND FIRST PRIORITY REPRESENTATIVE; WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE
Reel/Frame 022757/0017 →
RE-RECORD TO CORRECT THE SERIAL NUMBER ON A DOCUMENT PREVIOUSLY RECORDED AT REEL 022181, FRAME 0416. (ASSIGNMENT OF ASSIGNOR'S INTEREST) Recorded Feb 23, 2009
From: AMIN, NURUL; JIN, INSIK; TIAN, WEI; WIREBAUGH, ANDREW JAMES; VAITHYANATHAN, VENUGOPALAN; SUN, MING
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 022296/0323 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2009
From: AMIN, NURUL; JIN, INSIK; TIAN, WEI; WIREBAUGH, ANDREW JAMES; VAITHYANATHAN, VENUGOPALAN; SUN, MING
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 022181/0416 →