Capacitor device and method for manufacturing the same
This invention provides a capacitor device with a high dielectric constant material and multiple vertical electrode plates. The capacitor devices can be directly fabricated on a wafer with low temperature processes so as to be integrated with active devices formed on the wafer. This invention also forms vertical conducting lines in the capacitor devices using the through-silicon-via technology to facilitate the three-dimensional stacking of the capacitor devices.
1. A capacitor device, comprising:
a semiconductor substrate having at least one active device;
at least one capacitor device formed in a predetermined region of said semiconductor substrate, said capacitor device comprising:
a bulk dielectric material positioned in said predetermined region of said semiconductor substrate;
a plurality of first electrode plates extending vertically from one surface of said semiconductor substrate into said bulk dielectric material, each first electrode plate being disposed parallel to one another;
a first common conducting line formed on said surface of said semiconductor substrate and electrically connecting said first electrode plates;
a plurality of second electrode plates extending vertically from said surface of said semiconductor substrate into said bulk dielectric material and interdigitating parallel to said first electrode plates;
a second common conducting line formed opposite to said first common conducting line on said surface of said semiconductor substrate and electrically connecting said second electrode plates; and
a first vertical conducting line, a first parallel conducting line, a second vertical conducting line and a second parallel conducting line, said first vertical conducting line extending through said semiconductor substrate and said first parallel conducting line, which is formed on said surface of said semiconductor substrate and electrically connecting said first vertical conducting line with a first electrode plate closest to the outside; and said second vertical conducting line formed opposite to said first vertical conducting line and extending through said semiconductor substrate and said second parallel conducting line, which is formed on said surface of said semiconductor substrate and electrically connecting said second vertical conducting line with a second electrode plate closest to the outside.
2. A capacitor device, comprising:
a semiconductor substrate having at least one active device;
at least one capacitor device formed in a predetermined region of said semiconductor substrate, said capacitor device comprising:
a bulk dielectric material positioned in said predetermined region of said semiconductor substrate;
a plurality of first electrode plates extending vertically from one surface of said semiconductor substrate into said bulk dielectric material, each first electrode plate being disposed parallel to one another;
a first common conducting line formed on said surface of said semiconductor substrate and electrically connecting said first electrode plates;
a plurality of second electrode plates extending vertically from said surface of said semiconductor substrate into said bulk dielectric material and interdigitating parallel to said first electrode plates;
a second common conducting line formed opposite to said first common conducting line on said surface of said semiconductor substrate and electrically connecting said second electrode plates; and
an adhesive layer bonded between said bulk dielectric material and said semiconductor substrate.
3. The capacitor device of claim 1 , comprising an adhesive layer bonded between said bulk dielectric material and said semiconductor substrate.
4. The capacitor device of claim 1 , further comprising at least one capacitor device of claim 2 stacked upon said surface of said capacitor device having high capacitance and high integration, wherein said first vertical conducting lines of capacitor devices and said second vertical conducting lines of capacitor devices respectively connect and align.
5. The capacitor device of claim 4 , further comprising a plurality of conductive bumps formed under another surface of the capacitor device at the bottom and electrically contacting said first vertical conducting line and said second vertical conducting line respectively.
6. The capacitor device of claim 1 , wherein said bulk dielectric material has a dielectric constant greater than 1000.
7. The capacitor device of claim 4 , wherein said bulk dielectric materials of said capacitor devices have a dielectric constant greater than 1000.