Semiconductor manufacturing facility utilizing exhaust recirculation
View Patent ↗A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
1. A gas box containing at least one low-pressure adsorbent-based gas source, said gas box being arranged for flow of air exhaust therethrough at a flow rate in a range of from 50 to 100 ft. 3 per minute (CFM), to sweep toxic leakage of gas from said low-pressure adsorbent-based gas source out of the gas box upon occurrence of such leakage.
2. The gas box of claim 1 , wherein said at least one low-pressure adsorbent-based gas source comprises a fluid storage and dispensing vessel containing an ion implant dopant gas on an adsorbent medium.
3. The gas box of claim 1 , wherein the box is coupled with an air exhaust system for said flow of air exhaust therethrough at said flow rate in said range of 50 to 100 ft. 3 per minute (CFM).
4. The gas box of claim 1 , disposed in an ion implanter enclosure, and arranged to supply dopant gas to an ion implanter tool in said ion implanter enclosure.
5. A method of operating a gas box of claim 1 in a facility containing same, said method comprising flowing air exhaust, at said flow rate in said range of from 50 to 100 ft. 3 per minute (CFM), through said gas box into an ambient environment of the facility.
6. A semiconductor manufacturing facility including a gas box containing at least one low-pressure adsorbent-based gas source, said gas box being arranged for flow of air exhaust therethrough at a flow rate in a range of from 50 to 100 ft. 3 per minute (CFM), to sweep toxic leakage of gas from said low-pressure adsorbent-based gas source out of the gas box upon occurrence of such leakage.
7. The gas box of claim 6 , wherein said at least one low-pressure adsorbent-based gas source comprises a fluid storage and dispensing vessel containing an ion implant dopant gas on an adsorbent medium.
8. The gas box of claim 6 , wherein the box is coupled with an air exhaust system for said flow of air exhaust therethrough.
9. The gas box of claim 6 , disposed in an ion implanter enclosure, and arranged to supply dopant gas to an ion implanter tool in said ion implanter enclosure.
10. A method of operating the semiconductor manufacturing facility of claim 6 , said method comprising flowing air exhaust, at said flow rate in said range of from 50 to 100 ft. 3 per minute (CFM), through said gas box into an ambient environment of the semiconductor manufacturing facility.