Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
1. A photovoltaic device, comprising:
a silicon substrate having a layer containing a plurality of charge-donating inclusions,
one or more electrical contacts disposed on the substrate to facilitate collection of electrical energy generated by said substrate in response to exposure of said surface layer to radiation,
wherein said photovoltaic device exhibits a responsivity greater than about 0.1 amperes/watt for at least one radiation wavelength in a range of about 1050 nm to about 3500 nm.
2. The photovoltaic device of claim 1 , wherein said device exhibits said responsivity at a zero applied bias.
3. The photovoltaic device of claim 1 , wherein said charge-donating inclusions comprise a plurality of sulfur inclusions.
4. The photovoltaic device of claim 1 , wherein said charge-donating inclusions comprise any of nitrogen, chlorine, tellurium and selenium inclusions.
5. The photovoltaic device of claim 1 , wherein said charge-donating inclusions have a concentration in a range of about 0.1 atom percent to about 5 atom percent.
6. The photovoltaic device of claim 1 , wherein said layer containing the charge donating inclusions has a thickness in a range of about 10 nm to about 1 micron.
7. The photovoltaic device of claim 1 , wherein said silicon substrate is doped.
8. The photovoltaic device of claim 1 , wherein said silicon substrate is a crystalline substrate.
9. The photovoltaic device of claim 1 , wherein said silicon substrate has a resistivity greater than about 1 ohm-cm.
10. The photovoltaic device of claim 7 , wherein said silicon substrate comprises a p-doped silicon substrate.
11. The photovoltaic device of claim 1 , wherein said layer containing a plurality of charge-donating inclusions is adjacent to an underlying bulk portion of the substrate and forms a diode junction with said bulk portion.
12. The photovoltaic device of claim 1 , wherein said photovoltaic device exhibits said responsivity of at least about 0.1 amperes/watt at a radiation wavelength of about 1100 nm.
13. The photovoltaic device of claim 1 , wherein said photovoltaic device exhibits said responsivity of at least about 0.1 amperes/watt at a radiation wavelength in a range of about 1100 nm to about 1200 nm.
14. A photovoltaic device, comprising:
a silicon substrate having a layer containing a plurality of charge-donating inclusions,
one or more electrical contacts disposed on the substrate to facilitate collection of electrical energy generated by said substrate in response to exposure of said surface layer to radiation,
wherein said photovoltaic device exhibits a responsivity greater than about 0.1 amperes/watt for at least one radiation wavelength in a range of about 1100 nm to about 1200 nm.
15. The photovoltaic device of claim 14 , wherein said device exhibits said responsivity at a zero applied bias.
16. The photovoltaic device of claim 14 , wherein said charge-donating inclusions comprise a plurality of sulfur inclusions.
17. The photovoltaic device of claim 14 , wherein said charge-donating inclusions comprise any of nitrogen, chlorine, tellurium and selenium inclusions.
18. The photovoltaic device of claim 14 , wherein said charge-donating inclusions have a concentration in a range of about 0.1 atom percent to about 5 atom percent.
19. The photovoltaic device of claim 14 , wherein said layer containing the charge donating inclusions has a thickness in a range of about 10 nm to about 1 micron.
20. The photovoltaic device of claim 14 , wherein said silicon substrate is doped.
21. The photovoltaic device of claim 14 , wherein said substrate is a crystalline substrate.
22. The photovoltaic device of claim 14 , wherein said silicon substrate has a resistivity greater than about 1 ohm-cm.
23. The photovoltaic device of claim 14 , wherein said silicon substrate comprises a p-doped silicon substrate.
24. The photovoltaic device of claim 14 , wherein said layer containing a plurality of charge-donating inclusions is adjacent to an underlying bulk portion of the substrate and forms a diode junction with said bulk portion.