METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS FOR USE IN THE SAME
A semiconductor substrate processing apparatus is provided with a cleaning process chamber containing a semiconductor substrate for performing a cleaning process on the semiconductor substrate. Connected to the cleaning process chamber is a cleaning liquid feeding pipe for supplying a cleaning liquid to the semiconductor substrate. A gas dissolving unit is provided in the midpoint of the cleaning liquid feeding pipe for dissolving a prescribed gas in ultrapure water. An inert gas or a reducing gas is dissolved as a prescribed gas in ultrapure water. A control unit is provided having a function of supplying the cleaning liquid with the prescribed gas dissolved therein to the semiconductor substrate subjected to the cleaning process before performing a dry process. Therefore, the surface of the semiconductor substrate is free from stains. Moreover, a metal interconnection does not elude.
1 . A method of manufacturing a semiconductor device comprising:
a step of forming a porous Low-k film exhibiting hydrophobicity at a main surface of a semiconductor substrate;
a step of forming a prescribed groove corresponding to an interconnection pattern in said porous Low-k film exhibiting hydrophobicity;
a step of forming a metal film on said porous Low-k film exhibiting hydrophobicity to fill in said groove;
a step of forming an interconnection in said groove by performing a chemical mechanical polishing process on said metal film for selectively leaving said metal film in said groove;
a first cleaning step of cleaning the surface of said semiconductor substrate after said chemical mechanical polishing process;
a second cleaning step of cleaning the surface of said semiconductor substrate after said first cleaning step; and
a step of drying the surface of said semiconductor substrate after said second cleaning step, wherein
a cleaning liquid in which a reducing gas or an inert gas is dissolved is used in said second cleaning step.
2 . The method of manufacturing a semiconductor device according to claim 1 , wherein
said first cleaning step includes a scrub cleaning process of cleaning a surface of said semiconductor substrate using a brush, and
said second cleaning step includes a spin cleaning process of rotating said semiconductor substrate during cleaning.
3 . The method of manufacturing a semiconductor device according to claim 1 , wherein said second cleaning step includes cleaning using as said cleaning liquid a cleaning liquid in which at least one of a reducing gas and an inert gas is dissolved.
4 . The method of manufacturing a semiconductor device according to claim 1 , wherein said interlayer insulating film includes a Low-k film having a dielectric constant of 2.0 to 3.7.
5 . The method of manufacturing a semiconductor device according to claim 1 , wherein said metal film includes at least copper (Cu).
6 . The method of manufacturing a semiconductor device according to claim 1 , wherein a solubility of said gas to be dissolved in said cleaning liquid is at least 40% of a saturation solubility of said gas to be dissolved with respect to said cleaning liquid.
7 . The method of manufacturing a semiconductor device according to claim 1 , wherein a solubility of said gas to be dissolved in said cleaning liquid is at least 60% of a saturation solubility of said gas to be dissolved with respect to said cleaning liquid.
8 . The method of manufacturing a semiconductor device according to claim 1 , wherein a solubility of said gas to be dissolved in said cleaning liquid is at least 80% of a saturation solubility of said gas to be dissolved with respect to said cleaning liquid.