IP Library Granted Patent US 8,257,829
Granted Patent B2
US 8,257,829 · App. 12/367,552 · Granted Sep 4, 2012

Fluorescence material

Assignees: Silitek Electronic (Guangzhou) Co., Ltd.; Lite-On Technology Corporation
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Quick Facts
Patent No.
US 8,257,829
App. No.
12/367,552
Granted
Sep 4, 2012
Kind
B2
Abstract

The present invention fluorescence material has a particle diameter of the crystal area defined as d c , and the scope of d c is: 150 nm≧d c ≧10 nm. The coat of the outside of the fluorescence material has one sheet of coating medium at least. Of course, there is at least a geometrical etching layer on the particle of the fluorescence material. The above-described structures will promote the extraction efficiency of light.

Claims (21)

1. A fluorescence material applied to a light emitting device, being of a shape having a long axis diameter and a short axis diameter, comprising:

a crystallized core portion having a diameter d c , and a range of the particle diameter d c being about 150 nm≧d c≧ 10 nm;

at least one coating medium layer coated on the surface of crystallized core portion for surrounding the crystallized core portion; and

a plurality of microstructures formed on the surface of the at least one coating medium layer to thus reduce the possibility of total reflection of an incident light;

wherein a ratio of the long axis diameter to the short axis diameter of the fluorescence particle diameter is defined as r, and a range of r meets the equation 3≧r>1 to thus increase light extraction efficiency of the fluorescence material particle;

wherein a refractive index of the crystallized core portion≧a refractive index of the at least one coating medium layer; and

wherein the plurality of microstructures are a plurality of protrusions of an identical shape or a plurality of cavities of an identical shape formed evenly on the at least one coating medium layer.

2. A fluorescence material applied to a light emitting device, being of a shape having a long axis diameter and a short axis diameter, comprising:

a crystallized core portion;

at least one coating medium layer coated on the surface of crystallized core portion for surrounding the crystallized core portion; and

a plurality of microstructures formed on the surface of the at least one coating medium layer to thus reduce the possibility of total reflection of an incident light;

wherein a ratio of the long axis diameter to the short axis diameter of the fluorescence material is defined as r, and a range of r meets the equation: 3≧r>1.

3. The fluorescence material of claim 2 , wherein the plurality of microstructures are a plurality of protrusions of an identical shape or a plurality of cavities of an identical shape formed evenly on the at least one coating medium layer.

4. A fluorescence material, comprising:

a crystallized core portion;

at least one coating medium layer coated on the surface of crystallized core portion for surrounding the crystallized core portion; and

wherein a plurality of microstructures formed on the surface of the at least one coating medium layer to thus reduce the possibility of total reflection of an incident light;

wherein the fluorescence material meets the following equation: a refractive index of the fluorescence material>=a refractive index of the coating medium>=a refractive index of the encapsulation.

5. The fluorescence material of claim 4 , wherein the a plurality of microstructures are taper-shaped, rectangular-shaped, or round-shaped.

6. The fluorescence material of claim 4 , wherein the plurality of microstructures are a plurality of protrusions of an identical shape or a plurality of cavities of an identical shape formed evenly on the at least one coating medium layer.

7. The fluorescence material of claim 5 , wherein the at least a layer of the coating medium comprises a plurality of refractive indexes of n 1 , n 2 , . . . , n n from an inner side to an outer side of the coating medium, and the fluorescence material meets the following equation: the refractive index of the fluorescence material>=n 1 >=n 2 . . . >=n n >=refractive index of the encapsulation.

Assignments (2)
CHANGE OF NAME Recorded Nov 2, 2013
From: SILITEK ELECTRONIC (GUANGZHOU) CO., LTD.
To: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED
Reel/Frame 031558/0832 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 9, 2009
From: TANG, YU-SHENG; HU, SHU-FEN; LIU, RU-SHI; SU, HUNG-YUAN; TSAI, CHENG-WEN
To: SILITEK ELECTRONIC(GUANGZHOU)CO.,LTD.; LITE-ON TECHNOLOGY CORP.
Reel/Frame 022223/0439 →
Priority Claims (1)
CN 2008 1 0030113 · Aug 7, 2008 · national
Continuity (1)
Related Publication 20100035042A1 · Feb 11, 2010