High ion/Ioff SOI MOSFET using body voltage control
View Patent ↗A semiconductor device may comprise a partially-depleted SOI MOSFET having a floating body region disposed between a source and drain. The floating body region may be driven to receive injected carriers for adjusting its potential during operation of the MOSFET. In a particular case, the MOSFET may comprise another region of semiconductor material in contiguous relationship with a drain/source region of the MOSFET and on a side thereof opposite to the body region. This additional region may be formed with a conductivity of type opposite the drain/source, and may establish an effective bipolar device per the body, the drain/source and the additional region. The geometries and doping thereof may be designed to establish a transport gain of magnitude sufficient to assist the injection of carriers into the floating body region, yet small enough to guard against inter-latching with the MOSFET.
1. A semiconductor device comprising:
a partially-depleted MOSFET formed above a buried dielectric layer;
a bias circuit coupled to bias a floating body of the partially-depleted MOSFET; and
a thyristor coupled to the partially-depleted MOSFET for selectable access of the thyristor via a channel in the floating body of the partially-depleted MOSFET.
2. The semiconductor device of claim 1 , in which the bias circuit comprises a voltage source and means for coupling the voltage source to the floating body.
3. The semiconductor device of claim 2 , in which the bias circuit further comprises a controller to control a voltage level of the voltage source.
4. The semiconductor device of claim 3 , in which the controller is configured to apply one of at least two different voltage levels to the floating body region dependent on operable selection from a group consisting of a first selection for a high off state isolation for the partially-depleted MOSFET and a second selection for a high drive current operability for the partially-depleted MOSFET.
5. The semiconductor device of claim 1 , wherein a gate electrode of the thyristor is for capacitively coupling to a base region of the thyristor.
6. The semiconductor device of claim 1 , wherein:
the buried dielectric layer is of a semiconductor-on-insulator substrate structure; and
the bias provided from the bias circuit is selectable to reduce both subthreshold voltage swing and change in gate-to-source voltage for operation of the partially-depleted MOSFET.