SEMICONDUCTOR DEVICE
The semiconductor device of the present invention comprises a semiconductor substrate; and a conductive element formed on the semiconductor substrate and capable of being opened when a predetermined current flows, wherein the conductive element turns plurality of times.
1 . A semiconductor device comprising:
a semiconductor substrate; and
a conductive element formed on said semiconductor substrate and capable of being opened when a predetermined current flows,
wherein said conductive element turns plurality of times.
2 . The semiconductor device as set forth in claim 1 , wherein said conductive element includes a first one way linear portion which extends in a first direction, an another way linear portion which extends in a second direction which is substantially opposite direction to said first direction, and an second one way linear portion which extends in said first direction, said first one way linear portion, said another way linear portion, and said second one way linear portion being positioned parallel to each other and electrically connected with each other.
3 . The semiconductor device as set forth in claim 1 , wherein said conductive element includes a first one way linear portion which extends in a first direction, an another way linear portion which extends in a second direction which is substantially opposite direction to said first direction, an second one way linear portion which extends in said first direction, a first connecting portion which connects one of the edges of said first one way linear portion and one of the edges of said another way linear portion, and a second connecting portion which connects the other of the edges of said another way linear portion and one of the edges of said second one way linear portion, said first one way linear portion, said another way linear portion, said second one way linear portion, said first connecting portion, and said second connecting portion being electrically connected with each other.
4 . The semiconductor device as set forth in claim 1 , wherein said conductive element includes a plurality of first linear portions positioned parallel to each other and each of which extends in a first direction, and a plurality of second linear portions positioned parallel to each other and each of which extends in a second direction which is different from said first direction, said plurality of first linear portions and said plurality of second linear portions being placed such that at least one of said plurality of first linear portions or at least one of said plurality of second linear portions is surrounded at four sides by the rest of said plurality of first linear portions and said plurality of second linear portions.
5 . The semiconductor device as set forth in claim 4 , wherein said plurality of first linear portions and said plurality of second linear portions are placed such that the current respectively flow toward different directions in said first linear portions adjacent to each other, and the current respectively flow toward different directions in said second linear portions adjacent to each other, when the current flows from one of the edges of said conductive element to the other edge of said conductive element.
6 . The semiconductor device as set forth in claim 1 , wherein said conductive element includes a plurality of first linear portions positioned parallel to each other and each of which extends in a first direction, a plurality of second linear portions positioned parallel to each other and each of which extends in a second direction which is different from said first direction, a current input terminal, and a current output terminal electrically connected with said current input terminal, said plurality of first linear portions and said plurality of second linear portions being placed such that the current respectively flow toward different directions in said first linear portions adjacent to each other, and the current respectively flow toward different directions in said second linear portions adjacent to each other, when the current flows from said current input terminal to said current output terminal.
7 . The semiconductor device as set forth in claim 1 , further includes a second conductive formed to surround said conductive element, wherein said conductive element and said second conductive element are insulated from each other.
8 . The semiconductor device as set forth in claim 7 , wherein said second conductive element includes a via conductive element which is formed at the side of said conductive element.
9 . The semiconductor device as set forth in claim 7 wherein said second conductive element includes a conductive plate which is formed above or below said conductive element.
10 . The semiconductor device as set forth in claim 1 , wherein said conductive element is constituted of a material mainly including copper, a poly-silicon including impurities, SiGe (silicon germanium), or silicide.