Method of forming semiconductor devices containing metal cap layers
View Patent ↗Methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments, the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.
1. A method of forming a semiconductor device, comprising:
planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions;
forming metal cap layers on the conductive paths; and
exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to introduce dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions;
wherein the dopant source comprises dopants containing P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof.
2. The method of claim 1 , wherein forming the metal cap layers comprises selectively forming metal cap layers on the conductive paths relative to the dielectric regions.
3. The method of claim 1 , wherein the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.
4. The method of claim 1 , wherein the dopant source comprises a stream of ionized gas clusters of dopant-containing molecules selected from PH 3 , PCl 3 , PCl 5 , PF 3 , PF 5 , PBr 3 , PBr 5 , BH 3 , B 2 H 6 , BCl 3 , BF 3 , NF 3 , NH 3 , and N 2 H 4 .
5. The method of claim 1 , wherein the dopant source comprises a stream of ionized gas clusters of dopant-containing molecules selected from silicon-containing gases and germanium-containing gases.
6. The method of claim 5 , wherein the silicon-containing gases comprise SiH 4 , Si 2 H 6 , SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , or Si 2 Cl 6 , and the germanium-containing gases comprise GeH 4 or GeCl 4 .
7. The method of claim 1 , wherein the doped metal cap layers and doped dielectric layers comprise between 0.1 atomic % and 10 atomic % of the dopants.
8. The method of claim 1 , wherein the dopant source further comprises a non-condensable source gas selected from He, Ne, or H 2 , or a combination thereof.
9. The method of claim 1 , wherein the exposing further forms doped conductive layers between the doped metal cap layers and the conductive paths.
10. The method of claim 1 , further comprising:
forming a barrier layer over the doped metal cap layers and the doped dielectric layers, wherein the barrier layer comprises silicon nitride, silicon carbide, nitrogen doped silicon carbide, oxygen doped silicon carbide, boron carbon nitride, or boron nitride.
11. The method of claim 10 , wherein forming the barrier layer comprises exposing the doped metal cap layers and doped dielectric layers to a gas cluster ion beam (GCIB).
12. The method of claim 1 , wherein forming the metal cap layers further comprises forming additional metal on the dielectric regions.
13. The method of claim 12 , wherein the exposing to a dopant source from GCIB removes at least a portion of the additional metal from the dielectric regions.
14. The method of claim 13 , wherein the exposing comprises simultaneous or sequential GCIB exposures of different dopant sources.
15. A method of forming a semiconductor device, comprising:
planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions;
selectively forming metal cap layers on the conductive paths relative to the dielectric regions, wherein the metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd; and
exposing the top surface of the workpiece to a dopant source containing dopants selected from P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof, from a gas cluster ion beam (GCIB) to introduce the dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions, each comprising between 0.1 atomic % and 10 atomic % of the dopant.
16. The method of claim 15 , wherein the dopant source comprises a stream of ionized gas clusters of dopant-containing molecules selected from PH 3 , PCl 3 , PCl 5 , PF 3 , PF 5 , PBr 3 , PBr 5 , BH 3 , B 2 H 6 , BCl 3 , BF 3 , NF 3 , NH 3 , and N 2 H 4 , and a non-condensable source gas selected from He, Ne, or H 2 , or a combination thereof.
17. The method of claim 15 , wherein the dopant source comprises a stream of ionized gas clusters of dopant-containing molecules selected from silicon-containing gases and germanium-containing gases, wherein the silicon-containing gases comprise SiH 4 , Si 2 H 6 , SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , or Si 2 Cl 6 , and the germanium-containing gases comprise GeH 4 or GeCl 4 .
18. The method of claim 15 , wherein the exposing further forms doped conductive layers between the doped metal cap layers and the conductive paths.
19. The method of claim 15 , further comprising:
forming a barrier layer comprising silicon nitride, silicon carbide, nitrogen doped silicon carbide, oxygen doped silicon carbide, boron carbon nitride, or boron nitride over the doped metal cap layers and the doped dielectric layers by exposing the doped metal cap layers and doped dielectric layers to a GCIB.
20. A method of forming a semiconductor device, comprising:
planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions;
forming metal cap layers on the conductive paths and additional metal on the dielectric regions, wherein the metal cap layers and the additional metal contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd; and
exposing the top surface of the workpiece to a dopant source containing dopants selected from P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof, from a gas cluster ion beam (GCIB) to remove at least a portion of the additional metal from the dielectric regions and to introduce the dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions, each comprising between 0.1 atomic % and 10 atomic % of the dopant.
21. The method of claim 20 , wherein the dopant source comprises a stream of ionized gas clusters of dopant-containing molecules selected from PH 3 , PCl 3 , PCl 5 , PF 3 , PF 5 , PBr 3 , PBr 5 , BH 3 , B 2 H 6 , BCl 3 , BF 3 , NF 3 , NH 3 , N 2 H 4 , SiH 4 , Si 2 H 6 , SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , Si 2 Cl 6 , GeH 4 , and GeCl 4 and a non-condensable source gas selected from He, Ne, or H 2 , or a combination thereof.
22. The method of claim 20 , wherein the exposing further forms doped conductive layers between the doped metal cap layers and the conductive paths.
23. The method of claim 20 , further comprising:
forming a barrier layer comprising silicon nitride, silicon carbide, nitrogen doped silicon carbide, oxygen doped silicon carbide, boron carbon nitride, or boron nitride over the doped metal cap layers and the doped dielectric layers by exposing the doped metal cap layers and doped dielectric layers to a GCIB.
24. The method of claim 20 , wherein the exposing comprises simultaneous or sequential GCIB exposures of different dopant sources.