Patent Assignment
Reel/Frame 051843/0245
Merger
Recorded: 2020-02-07
Pages: 17
Assignor
TEL EPION INC.
Executed: 2020-01-01
Assignee
TEL MANUFACTURING AND ENGINEERING OF AMERICA, INC.
3455 LYMAN BLVD., CHASKA, MINNESOTA, 55318
Covered Properties
(92)
Diamond-Like Carbon Film with Enhanced Adhesion
Patent:
6,660,340 →
Application:
09/717,182 →
Gas Cluster Ion Beam Low Mass Ion Filter
Method and Apparatus for Smoothing Thin Conductive Films by Gas Cluster Ion Beam
Ionizer for Gas Cluster Ion Beam Formation
Detector and Method for Cluster Ion Beam Diagnostics
System and Method for Adjusting the Properties of a Device by Gcib Processing
Adaptive Gcib for Smoothing Surfaces
Charging Control and Dosimetry System for Gas Cluster Ion Beam
System for and Method of Gas Cluster Ion Beam Processing
Gcib Processing of Integrated Circuit Interconnect Structures
Method of and Apparatus for Measurement and Control of a Gas Cluster Ion Beam
Methods of Forming Doped and Un-Doped Strained Semiconductor Materials and Semiconductor Films by Gas-Cluster-Ion-Beam Irradiation and Materials and Film Products
Formation of Ultra-Shallow Junctions by Gas-Cluster Ion Irradiation
Method and Apparatus for Improved Beam Stability in High Current Gas-Cluster Ion Beam Processing System
Method and Apparatus for Improved Processing with a Gas-Cluster Ion Beam
Dual Damascene Integration Structure and Method for Forming Improved Dual Damascene Integration Structure
Formation of Doped Regions and/or Ultra-Shallow Junctions in Semiconductor Materials by Gas-Cluster Ion Irradiation
Ionizer and Method for Gas-Cluster Ion-Beam Formation
Method and Apparatus for Arc Suppression in Scanned Ion Beam Processing Equipment
Copper Interconnect Wiring and Method of Forming Thereof
Method and Apparatus for Scanning a Workpiece Through an Ion Beam
Copper Interconnect Wiring and Method and Apparatus for Forming Thereof
Apparatus and Methods for Systematic Non-Uniformity Correction Using a Gas Cluster Ion Beam
Methods and Processing Systems for Using a Gas Cluster Ion Beam to Offset Systematic Non-Uniformities in Workpieces Processed in a Process Tool
Methods and Apparatus for Assigning a Beam Intensity Profile to a Gas Cluster Ion Beam Used to Process Workpieces
Apparatus and Method for Reducing Particulate Contamination in Gas Cluster Ion Beam Processing Equipment
Method and System for Increasing Throughput During Location Specific Processing of a Plurality of Substrates
Methods for Modifying Features of a Workpiece Using a Gas Cluster Ion Beam
Method to Improve Electrical Leakage Performance and to Minimize Electromigration in Semiconductor Devices
Method and Device for Adjusting a Beam Property in a Gas Cluster Ion Beam System
Method to Improve a Copper/Dielectric Interface in Semiconductor Devices
Method for Directional Deposition Using a Gas Cluster Ion Beam
Method and System for Multi-Pass Correction of Substrate Defects
Method and System for Adjusting Beam Dimension for High-Gradient Location Specific Processing
Method for Depositing Films Using Gas Cluster Ion Beam Processing
Method and Apparatus for Controlling a Gas Cluster Ion Beam Formed from a Gas Mixture
Method for Increasing the Penetration Depth of Material Infusion in a Substrate Using a Gas Cluster Ion Beam
Method and System for Growing a Thin Film Using a Gas Cluster Ion Beam
Method and System for Directional Growth Using a Gas Cluster Ion Beam
Method of Forming Semiconductor Devices Containing Metal Cap Layers
Method for Selectively Etching Areas of a Substrate Using a Gas Cluster Ion Beam
Electrostatic Chuck Power Supply
Self-Biasing Active Load Circuit and Related Power Supply for Use in a Charged Particle Beam Processing System
Surface Profile Adjustment Using Gas Cluster Ion Beam Processing
Method to Improve Electrical Leakage Performance and to Minimize Electromigration in Semiconductor Devices
Method for Forming Trench Isolation Using a Gas Cluster Ion Beam Growth Process
Method of Forming Semiconductor Devices Containing Metal Cap Layers
Material Infusion in a Trap Layer Structure Using Gas Cluster Ion Beam Processing
Ultra-Thin Film Formation Using Gas Cluster Ion Beam Processing
Method of Forming Capping Structures on One or More Material Layer Surfaces
Method for Modifying a Material Layer Using Gas Cluster Ion Beam Processing
Method for Enhancing a Substrate Using Gas Cluster Ion Beam Processing
Multiple Nozzle Gas Cluster Ion Beam System
Method of Irradiating Substrate with Gas Cluster Ion Beam Formed from Multiple Gas Nozzles
Method for Treating Non-Planar Structures Using Gas Cluster Ion Beam Processing
Method and System for Tilting a Substrate During Gas Cluster Ion Beam Processing
Method for Modifying an Etch Rate of a Material Layer Using Energetic Charged Particles
Multiple Nozzle Gas Cluster Ion Beam Processing System and Method of Operating
Electrostatic Chuck Power Supply
Gas Cluster Ion Beam System with Cleaning Apparatus
Gas Cluster Ion Beam System with Rapid Gas Switching Apparatus
Method to Alter Silicide Properties Using Gcib Treatment
Method for Modifying a Material Layer Using Gas Cluster Ion Beam Processing
GAS CLUSTER ION BEAM ETCHING PROCESS FOR Si-CONTAINING and Ge-CONTAINING MATERIALS
Gas Cluster Ion Beam Etching Process for Metal-Containing Materials
Gas Cluster Ion Beam Etching Process for Achieving Target Etch Process Metrics for Multiple Materials
Gas Cluster Ion Beam Etch Profile Control Using Beam Divergence
Scanner for Gcib System
Gas Cluster Ion Beam Process for Opening Conformal Layer in a High Aspect Ratio Contact Via
Surface Profile Adjustment Using Gas Cluster Ion Beam Processing
Gas Cluster Ion Beam Etching Process for Etching Si-Containing, Ge-Containing, and Metal-Containing Materials
Gas Cluster Ion Beam Process for Opening Conformal Layer in a High Aspect Ratio Contact Via
Method to Alter Silicide Properties Using Gcib Treatment
Method to Alter Silicide Properties Using Gcib Treatment
Pre-Aligned Nozzle/Skimmer
Gcib Etching Method for Adjusting Fin Height of Finfet Devices
Low Contamination Scanner for Gcib System
Apparatus and Methods for Implementing Predicted Systematic Error Correction in Location Specific Processing
Multi-Step Location Specific Process for Substrate Edge Profile Correction for Gcib System
Molecular Beam Enhanced Gcib Treatment
Sidewall Spacer Patterning Method Using Gas Cluster Ion Beam
Method and Apparatus for Beam Deflection in a Gas Cluster Ion Beam System
Gcib Nozzle Assembly
Multi-Step Location Specific Process for Substrate Edge Profile Correction for Gcib System
Process Gas Enhancement for Beam Treatment of a Substrate
Method of Surface Profile Correction Using Gas Cluster Ion Beam
Hybrid Corrective Processing System and Method
Method for High Throughput Using Beam Scan Size and Beam Position in Gas Cluster Ion Beam Processing System
Compensated Location Specific Processing Apparatus and Method
Hybrid Corrective Processing System and Method
Compensated Location Specific Processing Apparatus And Method
Method of Smoothing and Planarizing of AlTiC Surfaces
Application:
62/809,036 →
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.