Gas cluster ion beam etching process for Si-containing and Ge-containing materials
View Patent ↗A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
1. A method for etching Si-containing material on a substrate, comprising:
maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface;
holding said substrate securely within said reduced-pressure environment;
forming a gas cluster ion beam (GCIB) from a pressurized gas containing an etching gas that includes C, H, and a halogen element;
selecting one or more GCIB properties of said GCIB to achieve an etch selectivity relative to silicon in excess of unity;
accelerating said GCIB through said reduced-pressure environment; and
irradiating said GCIB onto at least a portion of said surface of said substrate to selectively etch a Si-containing material on said substrate, wherein said Si-containing material includes Si and one or more elements selected from the group consisting of O, C, N, and Ge.
2. The method of claim 1 , wherein said etching gas further includes Cl 2 , Br 2 , HCl, HBr, CClF 3 , CBrF 3 , or C 2 ClF 5 , or any combination of two or more thereof.
3. The method of claim 1 , wherein said pressurized gas mixture further a silicon-containing compound, a germanium-containing compound, a nitrogen-containing compound, an oxygen-containing compound, or any combination of two or more thereof.
4. The method of claim 1 , wherein said pressurized gas mixture further contains one or more elements selected from the group consisting of B, Si, Ge, N, P, As, O, and S.
5. The method of claim 1 , wherein said pressurized gas mixture further comprises He, Ne, Ar, Kr, Xe, O 2 , CO, CO 2 , N 2 , NO, NO 2 , N 2 O, NH 3 , F 2 , HF, SF 6 , or NF 3 , or any combination of two or more thereof.
6. The method of claim 1 , wherein said etching gas includes a mono-substituted halomethane, a di-substituted halomethane, or a tri-substituted halomethane, or any combination of two or more thereof.
7. The method of claim 1 , wherein said etching gas includes CHF 3 , CHCl 3 , or CHBr 3 .
8. The method of claim 1 , wherein said pressurized gas mixture further comprises He, Ne, Ar, Kr, Xe, O 2 , CO, CO 2 , N 2 , NO, NO 2 , N 2 O, NH 3 , F 2 , HF, SF 6 , or NF 3 , or any combination of two or more thereof.
9. The method of claim 1 , wherein said Si-containing material includes Si and at least one element selected from the group consisting of O and N, and wherein said etching gas includes CHF 3 .
10. The method of claim 1 , wherein said etching gas is a halomethane.
11. The method of claim 10 , wherein said etching gas includes a first halogen element selected from the group consisting of Cl and Br, and a second halogen element that is F.