Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials

1. A method for etching material on a substrate, comprising:

maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a first material, a second material, and a surface exposing at least one of said first material and said second material;

holding said substrate securely within said reduced-pressure environment; and

performing a gas cluster ion beam (GCIB) etching process to remove at least a portion of said first material using a GCIB, said performing said GCIB etching process including:

selecting target etch process metrics for said GCIB etching process, said target etch process metrics including an etch selectivity between said first material and said second material, and at least one of a surface roughness of said first material or a surface roughness of said second material;

establishing a GCIB process condition including GCIB properties for said GCIB etching process to achieve said target etch process metrics, said establishing said GCIB process condition including setting a process composition, a flow rate of at least one constituent in said process composition, a beam acceleration potential, and at least one of a background gas pressure or a background gas flow rate for an increased pressure region through which said GCIB passes;

forming said GCIB from a pressurized gas containing said process composition, said process composition including at least one etching gas;

accelerating said GCIB through said reduced-pressure environment in accordance with said established GCIB process condition; and

irradiating said GCIB onto at least a portion of said surface of said substrate to remove said at least a portion of said first material.

2. The method of claim 1 , wherein said GCIB properties of said GCIB process condition further include a beam dose, a beam focus potential, a beam energy, a beam energy distribution, a beam angular distribution, a beam divergence angle, or a stagnation pressure.

3. The method of claim 2 , wherein said at least one etching gas of said process composition includes a first etching gas and a second etching gas.

4. The method of claim 3 , wherein said first etching gas contains Cl or Br, and said second etching gas contains F.

5. The method of claim 3 , wherein said first etching gas contains Cl 2 , and said second etching gas contains NF 3 .

6. The method of claim 3 , wherein said first etching gas contains a halomethane or a halide, and said second etching gas contains F, Cl, or Br.

7. The method of claim 3 , wherein said first etching gas contains C, H, and a halogen element, and said second etching gas contains F, Cl, or Br.

8. The method of claim 3 , wherein said first etching gas contains CHF 3 , CHCl 3 , or CHBr 3 , and said second etching gas contains NF 3 or Cl 2 .

9. The method of claim 3 , wherein said first etching gas and said second etching gas are continuously introduced to said GCIB during said irradiating.

10. The method of claim 3 , wherein said first etching gas and said second etching gas are alternatingly and sequentially introduced to said GCIB during said irradiating.

11. The method of claim 1 , further comprising:

introducing an additive gas to said GCIB to alter said process composition and achieve said target etch process metrics.

12. The method of claim 1 , further comprising:

adjusting said one or more GCIB properties to alter said target etch selectivity from a value less than unity to a value near or above unity.

13. The method of claim 1 , said target surface roughness for said first material and/or said second material is less than or equal to 5 Angstrom.

14. The method of claim 1 , further comprising:

planarizing an upper surface of said substrate.

15. The method of claim 1 , further comprising:

altering said target etch process metrics to create one or more new target etch process metrics; and

setting one or more additional GCIB properties of an additional GCIB process condition for said GCIB to achieve said one or more new target etch process metrics.

16. The method of claim 1 , wherein said first material comprises photo-resist, and said second material comprises a Si-containing material, a Ge-containing material, a metal-containing material, a semiconductor material, or a chalcogenide material.

17. The method of claim 1 , wherein said first material comprises silicon, and said second material comprises a Si-containing material having Si and one or more elements selected from the group consisting of O, N, C, and Ge.

18. The method of claim 1 , wherein said first material comprises a Si-containing material, and said second material comprises a Ge-containing material.

19. The method of claim 1 , wherein said first material comprises a Si-containing material, and said second material comprises a metal-containing material.

20. The method of claim 1 , wherein said process composition contains a halomethane gas, and at least one gas selected from the group consisting of an oxygen-containing gas and a noble gas, and wherein said first material contains Si and O, and said second material contains Si and optionally N.