Method of Manufacturing Substrates Having Improved Carrier Lifetimes
This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. This invention also relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon-containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr.
1 . A method for depositing silicon carbide coating onto a substrate such that the resulting coating has a carrier lifetime of 0.5-1000 microseconds, the method comprising
a. introducing a gas mixture comprising a chlorosilane gas, wherein the chlorosilane gas is dichlorosilane gas, methylhydrogendichlorosilane gas, dimethyldichlorosilane gas, or mixtures thereof, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a single crystal silicon carbide substrate;
b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.;
with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr.
2 . A method according to claim 1 wherein the gas mixture further comprises a doping gas.
3 . A method according to claim 2 wherein the doping gas is nitrogen gas, phosphine gas, or trimethylaluminum gas.
4 . (canceled)
5 . A method according to claim 1 , wherein the carbon-containing gas has the formula H a C b Cl c , where a and b are greater than zero, and c is greater than or equal to zero.
6 . A method according to claim 1 wherein the carbon-containing gas is C 3 H 8 gas, C 2 H 6 gas, CH 3 Cl gas, or CH 3 CH 2 CH 2 Cl gas.
7 . A product produced in accordance with the method of claim 1 .
8 . (canceled)
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