Substrate processing apparatus
View Patent ↗A substrate processing apparatus includes a processing chamber in which a substrate is mounted, a gas supply unit that supplies processing gas into the processing chamber, a gas exhaust unit that exhausts atmospheric gas in the processing chamber, first and second electrodes to which high-frequency power is applied to set the processing gas to an active state. Each of the first and second electrodes includes a core wire formed of a metal and plural pipe bodies that are joined to one another through the core wire so as to be bendable, and less thermally deformed than the core wire.
1. A substrate processing apparatus comprising:
a processing chamber in which a substrate is mounted;
a gas supply unit that supplies processing gas into the processing chamber;
a gas exhaust unit that exhausts atmospheric gas in the processing chamber;
at least a pair of electrodes to which high-frequency power is applied to set the processing gas to an active state; and
a mount pipe in which each of the pair of electrodes is mounted while at least one place thereof is bent, wherein each of the electrodes comprises a core wire formed of a metal and plural pipe bodies that are joined consecutively to one another through the core wire so as to be bendable, less thermally deformed than the core wire, and are formed of an insulating material, wherein:
each of the electrodes is further provided with a flexible meshed member that is formed of a metal and provided so as to cover the outer surfaces of the plural pipe bodies,
a first end side of a first electrode of the at least pair of electrodes is configured to be inserted into the mount pipe and a second end side of the first electrode is configured to be pressed, which allows the first electrode to be inserted in the mount pipe along a bent portion of the mount pipe, and
the plural pipe bodies adjoining each other come into contact with at least a portion of an adjoining pipe body.
2. The substrate processing apparatus according to claim 1 , wherein the pipe bodies are formed of quartz.
3. The substrate processing apparatus according to claim 1 , wherein the shape of the pipes is substantially spherical.
4. The substrate processing apparatus according to claim 1 , wherein the core wire is formed of a plastically deformable metal.
5. The substrate processing apparatus according to claim 1 , wherein the core wire is formed of nickel.
6. The substrate processing apparatus according to claim 1 , wherein each electrode is mounted into a respective bent mount pipe by inserting each first end side of each electrode into the mount pipe and moving the each first end side along the mount pipe through applying pressure to a second end side of each electrode until each electrode is mounted in each respective mount pipe.
7. An electrode comprising:
a core wire formed of a metal; and
plural pipe bodies that are joined consecutively to one another through the core wire so as to be bendable, less thermally deformed than the core wire, and are formed of an insulating material, wherein:
the electrode is provided with a flexible meshed member that is formed of a metal and provided so as to cover the outer surfaces of the plural pipe bodies,
a first end side of the electrode is configured to be inserted into the mount pipe and a second end side of the electrode is configured to be pressed, which allows the first electrode to be inserted in the mount pipe along a bent portion of the mount pipe,
the electrode is configured to be applied with high-frequency power to set a processing gas to active state,
the plural pipe bodies adjoining each other come into contact with at least a portion of an adjoining pipe body.
8. A method of manufacturing a semiconductor device comprising:
mounting a substrate into a processing chamber, and
applying high-frequency power to at least a pair of electrodes, each of the electrodes comprises a core wire formed of a metal and plural pipe bodies that are joined consecutively to one another through the core wire so as to be bendable, less thermally deformed than the core wire, and are formed of an insulating material, to set a processing gas in the processing chamber to an active state, wherein:
each of the electrodes is further provided with a flexible meshed member that is formed of a metal and provided so as to cover the outer surfaces of the plural pipe bodies,
a first end side of a first electrode of the at least pair of electrodes is configured to be inserted into the mount pipe and a second end side of the first electrode is configured to be pressed, which allows the first electrode to be inserted in the mount pipe along a bent portion of the mount pipe, and
the plural pipe bodies adjoining each other come into contact with at least a portion of an adjoining pipe body.
9. The method of manufacturing a semiconductor device according to claim 8 , wherein each electrode is mounted into a respective bent mount pipe by inserting each first end side of each electrode into the mount pipe and moving the each first end side along the mount pipe through applying pressure to a second end side of each electrode until each electrode is mounted in each respective mount pipe.