Copper interconnection structure, barrier layer including carbon and hydrogen

1. A copper interconnection structure, comprising:

an insulating layer including silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O);

an interconnection located on the insulating layer, the interconnection including copper (element symbol: Cu); and

a barrier layer located between the insulating layer and the interconnection, the barrier layer including an additional element, carbon (element symbol: C) and hydrogen (element symbol: H);

wherein the barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.

2. The copper interconnection structure of claim 1 , wherein the insulating layer includes carbon (element symbol: C) and hydrogen (H) as a hydrocarbon radical.

3. The copper interconnection structure of claim 2 , wherein the number of the carbon (element symbol: C) atom of hydrocarbon radical is one or two.

4. The copper interconnection structure of claim 2 , wherein the hydrocarbon radical includes a methyl radical (—CH 3 ).

5. The copper interconnection structure of claim 1 , wherein the additional element is manganese (element symbol: Mn).

6. The copper interconnection structure of claim 1 , wherein the barrier layer has the atomic concentration of carbon (element symbol: C) or hydrogen (element symbol: H) maximized in a central region of a thickness of the barrier layer.

7. The copper interconnection structure of claim 1 , wherein the maximum atomic concentration of the carbon (element symbol: C) in the barrier layer is not more than the maximum atomic concentration of the additional element in the barrier layer.

8. The copper interconnection structure of claim 1 , wherein the maximum atomic concentration of the hydrogen (element symbol: H) in the barrier layer is not more than the maximum atomic concentration of the additional element in the barrier layer.

9. The copper interconnection structure of claim 8 , wherein the maximum atomic concentration of the hydrogen (element symbol: H) in the barrier layer is not more than the maximum atomic concentration of the carbon (element symbol: C) in the barrier layer.

10. A semiconductor device having a copper interconnection, comprising:

a silicon oxide carbide (SiOC) insulating film formed over a semiconductor substrate, the SiOC insulating film including silicon (element symbol: Si), oxygen (element symbol: O) and carbon (element symbol: C) in a form of a hydrocarbon radical;

a barrier layer formed on an inner surface of a groove disposed on the SiOC insulating film, the barrier layer including manganese (element symbol: Mn), carbon (element symbol: C) and hydrogen (element symbol: H); and

an interconnection formed on the barrier layer and buried in the groove, the interconnection including copper (element symbol: Cu);

wherein the barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a part of a thickness of the barrier layer in which the atomic concentration of the manganese (element symbol: Mn) is maximized.

11. The semiconductor device of claim 10 , wherein the barrier layer has the atomic concentration of carbon (element symbol: C) or hydrogen (element symbol: H) maximized in a central part of a thickness of the barrier layer.

12. The semiconductor device of claim 10 , wherein the maximum atomic concentration of the carbon (element symbol: C) in the barrier layer is not more than the maximum atomic concentration of the manganese (element symbol: Mn) in the barrier layer, and the maximum atomic concentration of the hydrogen (element symbol: H) in the barrier layer is not more than the maximum atomic concentration of the carbon (element symbol: C) in the barrier layer.