Systems and methods for implementing an interaction between a laser shaped as line beam and a film deposited on a substrate
View Patent ↗A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
1. An apparatus for focusing a beam for interaction with a film, the beam defining a short axis and a long axis, said axes being mutually orthogonal, said apparatus comprising:
a short axis field stop positioned at a distance, d 1 , from said film;
a first optic for focusing a laser beam at said field stop, thus producing a first line beam having a short axis width constrained by said field stop and being non-collimated along the long axis;
a second optic positioned between said field stop and said film for focusing said first line beam onto said film in the short axis, thus producing said beam for interaction with the film, said beam also being non-collimated at the film in the long axis; and
a detecting system to analyze light reflected from the film on an image plane, said image plane being positioned at a distance, d 2 , along a reflected beam path from said film, with d 2 substantially equal to d 1 , said detecting system analyzing said reflected light to determine whether said beam is focused in the short axis at said film.
2. An apparatus as recited in claim 1 wherein said detecting system comprises a minor disposed along said reflected beam path between said film and said image plane.
3. An apparatus as recited in claim 2 wherein said detecting system further comprises a camera and a lens, said lens positioned to project and magnify an image from said image plane to said camera.
4. An apparatus as recited in claim 1 wherein said detecting system is a first detecting system to determine whether said beam is focused in the short axis at a first location along the long axis of said film and said apparatus further comprises a second detecting system to determine whether said beam is focused in the short axis at a second location along the long axis of said film.
5. An apparatus as recited in claim 4 wherein each said detecting system comprises a respective minor, magnifying lens and camera.
6. An apparatus as recited in claim 1 wherein said film is comprised of amorphous silicon material and said beam is a pulsed laser focused to melt said film.
7. An apparatus for focusing a beam for interaction with a film, the beam defining a short axis and a long axis, said axes being mutually orthogonal, said apparatus comprising:
a short axis field stop positioned at a distance, d 1 , from said film;
a first optic for focusing a laser beam at said field stop, thus producing a first line beam having a short axis width constrained by said field stop and being non-collimated along the long axis;
a second optic positioned between said field stop and said film for focusing said first line beam onto said film in the short axis, thus producing said beam for interaction with the film, said beam also being non-collimated at the film in the long axis; and
a detecting system to analyze light reflected from the film on an image plane, said image plane being positioned at a distance, d 2 , along a reflected beam path from said film, with d 2 substantially equal to d 1 , said detecting system analyzing said reflected light to determine whether said beam is focused in the short axis at said film and producing at least one signal for changing one or more system variables to alter a focus of said beam at said film in the short axis responsive to said at least one signal produced by said detecting system.
8. An apparatus as recited in claim 7 wherein said detecting system comprises a minor disposed along said reflected beam path between said film and said image plane.
9. An apparatus as recited in claim 8 wherein said detecting system further comprises a camera and a lens, said lens positioned to project and magnify an image from said image plane to said camera.
10. An apparatus as recited in claim 7 wherein said detecting system is a first detecting system to determine whether said beam is focused in the short axis at a first location along the long axis of said film and said apparatus further comprises a second detecting system to determine whether said beam is focused in the short axis at a second location along the long axis of said film.
11. An apparatus as recited in claim 10 wherein each said detecting system comprises a respective minor, magnifying lens and camera.
12. An apparatus as recited in claim 7 wherein said film is comprised of amorphous silicon material and said beam is a pulsed laser focused to melt said film.
13. An apparatus as recited in claim 7 wherein said field stop comprises a slit.
14. An apparatus as recited in claim 7 wherein said field stop comprises a single edge.
15. An apparatus for focusing a beam for interaction with a film, the beam defining a short axis and a long axis, said axes being mutually orthogonal, said apparatus comprising:
a short axis field stop positioned at a distance, d 1 , from said film;
a first optic for focusing a laser beam at said field stop, thus producing a first line beam having a short axis width constrained by said field stop and being non-collimated along the long axis;
a second optic positioned between said field stop and said film for focusing said first line beam onto said film in the short axis, thus producing said beam for interaction with the film, said beam also being non-collimated at the film in the long axis; and
a detecting system to analyze light reflected from the film on an image plane, said image plane being positioned at a distance, d 2 , along a reflected beam path from said film, with d 2 substantially equal to d 1 , said detecting system analyzing said reflected light to determine whether said beam is focused in the short axis at said film and producing at least one signal for changing one or more system variables to alter an energy density of said beam at said film responsive to said at least one signal produced by said detecting system.
16. An apparatus as recited in claim 15 wherein said detecting system comprises a minor disposed along said reflected beam path between said film and said image plane.
17. An apparatus as recited in claim 16 wherein said detecting system further comprises a camera and a lens, said lens positioned to project and magnify an image from said image plane to said camera.
18. An apparatus as recited in claim 15 wherein said detecting system is a first detecting system to determine whether said beam is focused in the short axis at a first location along the long axis of said film and said apparatus further comprises a second detecting system to determine whether said beam is focused in the short axis at a second location along the long axis of said film.
19. An apparatus as recited in claim 18 wherein each said detecting system comprises a respective minor, magnifying lens and camera.
20. An apparatus as recited in claim 15 wherein said film is comprised of amorphous silicon material and said beam is a pulsed laser focused to melt said film.