IP Library Granted Patent US 8,115,169
Granted Patent B2
US 8,115,169 · App. 12/388,968 · Granted Feb 14, 2012

Method and apparatus of pattern inspection and semiconductor inspection system using the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,115,169
App. No.
12/388,968
Granted
Feb 14, 2012
Kind
B2
Abstract

A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.

Claims (11)

1. A pattern data forming apparatus comprising:

a data input interface that receives design data including pattern information of a specific layer of a semiconductor device and an image obtained by a scanning electron microscope; and

a data calculator that forms contour data by narrowing a pattern edge included in the image, detects a correspondence between the contour data of the specific layer and the design data of the specific layer, and generates vector data of the contour data of the specific layer based on the detection of correspondence between the contour data and the design data.

2. The pattern data forming apparatus according to claim 1 , wherein the contour data of the specific layer is extracted from contour data of a plurality of layers.

3. A pattern forming apparatus comprising:

an input interface for receiving design data of a layer and an object contained within the layer; and

a processor for narrowing an edge of an image obtained from a scanning electron microscope, and specifying the layer including the object by detecting a correspondence between narrowed line pattern and the design data.

4. The pattern forming apparatus according to claim 3 , wherein the narrowed line pattern is line data formed by narrowing a contour of a pattern of the image which is obtained by the scanning electron microscope.

5. The pattern forming apparatus according to claim 3 , wherein the processor extracts pattern data belonging to the layer in which the object is included.

6. The pattern forming apparatus according to claim 3 , wherein the processor executes a pattern matching algorithm between the narrowed line pattern data and the design data.

7. The pattern data forming apparatus according to claim 6 , wherein the processor identifies a measurement position of the narrowed line pattern data based on the pattern matching algorithm.

Assignments (1)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →