IP Library Granted Patent US 7,998,758
Granted Patent B2
US 7,998,758 · App. 12/389,422 · Granted Aug 16, 2011

Method of fabricating a magnetic stack design with decreased substrate stress

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,998,758
App. No.
12/389,422
Granted
Aug 16, 2011
Kind
B2
Abstract

A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.

Claims (19)

1. A method of making a magnetic element comprising:

patterning a first electrode material to form a first electrode on a substrate, wherein patterning the first electrode material to form a first electrode comprises patterning the first electrode material to form a dog-bone shaped first electrode;

depositing filler on the substrate around the first electrode;

polishing to form a planar surface comprising the filler and the first electrode; and

forming a magnetic cell on the planar surface and a second electrode on the magnetic cell.

2. The method of claim 1 wherein depositing filler comprises depositing dielectric filler comprising SiO 2 , Al 2 O 3 , FSG (fluorinated silicate glass), doped SiO 2 , SiN or MgO.

3. The method of claim 1 wherein the first electrode material and the second electrode material comprise TiN, TaN, Cu or W.

4. The method of claim 3 wherein patterning a first electrode material comprises patterning a first electrode material with a thickness of about 1000 Å.

5. The method of claim 1 wherein polishing comprises chemical-mechanical polishing (CMP).

6. The method of claim 1 wherein forming a magnetic cell comprises forming a magnetic cell comprising a first ferromagnetic layer having a pinned magnetization orientation, a second ferromagnetic layer having a switchable magnetization orientation, and a non-magnetic layer therebetween.

7. The method of claim 6 wherein forming a magnetic cell comprises forming a magnetic cell having a thickness of about 600 Å.

8. The method of claim 6 wherein forming a magnetic cell comprises providing a magnetic cell layer and etching the layer to form the magnetic cell.

9. The method of claim 8 wherein etching the magnetic cell layer comprises ion beam etching (IBE) or reactive-ion etching (RIE).

10. The method of claim 1 wherein forming a second electrode comprises forming a second electrode having a thickness of about 2000 Å.

11. The method of claim 1 further comprising deposing a spacer layer over the second electrode and polishing the spacer layer to form a planar surface.

12. The method of claim 1 wherein the dumbbell shaped first electrode has a width at least twice a width of the magnetic cell.

13. The method of claim 1 wherein:

patterning a first electrode material to form a first electrode comprises forming the first electrode with an aspect ratio, and

forming a magnetic cell comprises forming the magnetic cell with an aspect ratio, wherein the aspect ratio of the magnetic cell is the same as the aspect ratio of the first electrode.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Jul 23, 2025
From: THE BANK OF NOVA SCOTIA
To: SEAGATE TECHNOLOGY PUBLIC LIMITED COMPANY; SEAGATE TECHNOLOGY; SEAGATE TECHNOLOGY HDD HOLDINGS; I365 INC.; SEAGATE TECHNOLOGY LLC; SEAGATE TECHNOLOGY INTERNATIONAL; SEAGATE HDD CAYMAN; SEAGATE TECHNOLOGY (US) HOLDINGS, INC.
Reel/Frame 072193/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Jul 19, 2013
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE
To: SEAGATE TECHNOLOGY LLC; EVAULT INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY INTERNATIONAL; SEAGATE TECHNOLOGY US HOLDINGS, INC.
Reel/Frame 030833/0001 →
SECURITY AGREEMENT Recorded Mar 24, 2011
From: SEAGATE TECHNOLOGY LLC
To: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
Reel/Frame 026010/0350 →
RELEASE Recorded Jan 19, 2011
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: SEAGATE TECHNOLOGY HDD HOLDINGS; MAXTOR CORPORATION; SEAGATE TECHNOLOGY LLC; SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 025662/0001 →
SECURITY AGREEMENT Recorded May 15, 2009
From: MAXTOR CORPORATION; SEAGATE TECHNOLOGY LLC; SEAGATE TECHNOLOGY INTERNATIONAL
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT AND FIRST PRIORITY REPRESENTATIVE; WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE
Reel/Frame 022757/0017 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2009
From: AHN, YONGCHUL; HUANG, SHUIYUAN; KHOUEIR, ANTOINE; ANDERSON, PAUL EDWARD; JIA, LILI; HUTCHINSON, CHRISTINA LAURA; IVANOV, IVAN; DIMITROV, DIMITAR V.
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 022325/0331 →