Semiconductor device having a refractory metal containing film and method for manufacturing the same
View Patent ↗A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO 2 film provided on the silicon substrate, copper films embedded in the SiO 2 film, TiN films covering an upper face of a boundary region between an upper face of copper films and the copper films, and the SiO 2 film, and SiON films covering an upper face of the TiN films.
1. A method for manufacturing a semiconductor device comprising:
forming a first insulating film on a semiconductor substrate;
embedding a copper containing metal film in said first insulating film;
forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;
forming a second insulating film covering an upper face of said refractory metal containing film;
forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film and said refractory metal containing film while employing said resist film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film; and
removing said resist film while employing an oxygen plasma.
2. A method for manufacturing a semiconductor device comprising:
forming a first insulating film on a semiconductor substrate;
embedding a copper containing metal film in said first insulating film;
forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;
forming a second insulating film covering an upper face of said refractory metal containing film; and
forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film while employing said resist film as a mask, removing said resist film while employing an oxygen plasma, etching selectively said refractory metal containing film while employing said second insulating film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film in connection with said second insulating film and said refractory metal containing film.
3. A method for manufacturing a semiconductor device comprising:
forming a first insulating film on a semiconductor substrate;
embedding a copper containing metal film in said first insulating film;
forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;
forming a second insulating film covering an upper face of said refractory metal containing film;
forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film and said refractory metal containing film while employing said resist film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film;
removing said resist film while employing an oxygen plasma;
removing said second insulating film; and
forming an electrode pad on an upper face of said refractory metal containing film.
4. The method for manufacturing a semiconductor device according to claim 3 , further comprising: forming a solder ball on an upper face of said electrode pad.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein said forming said second insulating film includes forming said second insulating film by plasma technique or CVD technique.
6. The method for manufacturing a semiconductor device according to claim 2 , wherein said forming said second insulating film includes forming said second insulating film by plasma technique or CVD technique.
7. The method for manufacturing a semiconductor device according to claim 3 , wherein said forming said second insulating film includes forming said second insulating film by plasma technique or CVD technique.