IP Library Granted Patent US 7,619,297
Granted Patent B2
US 7,619,297 · App. 12/390,133 · Granted Nov 17, 2009

Electronic device including an inductor

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Quick Facts
Patent No.
US 7,619,297
App. No.
12/390,133
Granted
Nov 17, 2009
Kind
B2
Abstract

An electronic device can include an inductor overlying a shock-absorbing layer. In one aspect, the electronic device can include a substrate, an interconnect level overlying the substrate, and the shock-absorbing layer overlying the interconnect level. The inductor can include conductive traces and looped wires. The conductive traces can be attached to the conductive traces over the shock-absorbing layer. In another aspect, a process can be used to form the electronic device including the inductor. In still another aspect, an electronic device can a toroidal-shaped inductor that includes linear inductor segments that are connected in series.

Claims (48)

1. An electronic device comprising:

a substrate;

an interconnect level overlying the substrate, wherein the interconnect level comprises a first interconnect and a second interconnect;

a shock-absorbing layer overlying the interconnect level, wherein the shock-absorbing layer includes a first opening over the first interconnect and a second opening over the second interconnect; and

a first inductor including conductive traces and at least one looped wire, wherein:

the conductive traces include a first conductive trace and a second conductive trace;

a first via pad portion of the first conductive trace extends to the first opening of the shock-absorbing layer and is electrically connected to the first interconnect, and a primary pad portion of the first conductive trace overlies the shock-absorbing layer;

a secondary pad portion of the second conductive trace overlies the shock-absorbing layer, and a via portion of the second conductive trace extends to the second opening of the shock-absorbing layer and is electrically connected to the second interconnect;

a first looped wire of the at least one wire is wire bonded to the primary pad portion of the first conductive trace; and

the first looped wire or a second looped wire of the at least one wire is wire bonded to the secondary pad portion of the second conductive trace.

2. The electronic device of claim 1 , wherein the shock absorbing layer comprises an organic polymer.

3. The electronic device of claim 1 , wherein:

the conductive traces include third conductive traces overlying the shock-absorbing layer;

each of the third conductive traces includes a primary pad portion and a secondary pad portion; and

the at least one looped wire include third looped wires bonded between the primary pad portions and the secondary pad portions of adjacent third conductive traces, wherein the third looped wires are bonded at areas overlying the shock-absorbing layer.

4. The electronic device of claim 3 , wherein for each of the third conductive traces, the primary pad portion is smaller than the secondary pad portion.

5. The electronic device of claim 4 , wherein from a top view:

the primary pad portions of the third conductive traces are oriented along a substantially straight line; and

the secondary pad portions of the third conductive traces are oriented in a staggered formation.

6. The electronic device of claim 1 , further comprising an insulating layer overlying the interconnect level and underlying the shock-absorbing layer, wherein:

the insulating layer includes an inorganic material; and

the insulating layer includes a third opening overlying the first interconnect and a fourth opening overlying the second interconnect.

7. The electronic device of claim 6 , wherein:

the interconnect level further comprises bonding pads;

the insulating layer includes fifth openings overlying the bonding pads; and

the shock-absorbing layer includes sixth openings overlying the bonding pads.

8. The electronic device of claim 7 , wherein:

the insulating layer abuts the first interconnect, the second interconnect, and the shock-absorbing layer;

the shock-absorbing layer includes polyimide and abuts the conductive traces; and

the conductive traces include an adhesion/barrier layer and a conductive layer.

9. The electronic device of claim 7 , wherein the bonding pads and the conductive traces comprise gold.

10. The electronic device of claim 1 , further comprising a radio-frequency shielding element adjacent to the first inductor, wherein the radio-frequency shielding element is in a form of a grid.

11. The electronic device of claim 1 , further comprising an electronic component lying at least partly within the substrate.

12. The electronic device of claim 1 , further comprising a first transistor lying below the first looped wire.

13. The electronic device of claim 12 , wherein the first transistor is at least partly disposed within a well region.

14. The electronic device of claim 12 , further comprising a second transistor that does not lie below the first looped wire.

15. The electronic device of claim 1 , wherein the first inductor is part of a toroidal-shape inductor.

16. An electronic device comprising:

a workpiece; and

a toroidal-shaped inductor overlying the workpiece, wherein:

the toroidal-shaped inductor includes linear inductor segments that are connected in series; and

the linear inductor segments include a first linear inductor segment that includes the first inductor of claim 1 .

17. The electronic device of claim 16 , wherein the conductive traces abut the shock-absorbing layer.

18. The electronic device of claim 17 , wherein:

the shock-absorbing layer includes polyimide; and

the conductive traces include an adhesion/barrier layer and a conductive layer.

19. The electronic device of claim 16 , further comprising a radio-frequency shielding element in a form of a grid.

20. The electronic device of claim 16 , wherein the conductive traces comprise gold.

Assignments (29)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037355/0723 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0793 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Mar 15, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
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SECURITY AGREEMENT Recorded May 19, 2009
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
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