Annealing method of zinc oxide thin film
An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.
1. A method of removing moisture from a zinc oxide thin film, comprising:
loading a substrate coated with a zinc oxide thin film into a chamber, the zinc oxide thin film containing moisture;
flowing a hydrogen gas into the chamber at a flux;
fixing pressure at 0.3 to 5 Torr in the chamber; and
annealing the zinc oxide thin film using the hydrogen gas in the chamber so that the hydrogen gas is activated and the activated hydrogen gas is diffused into the zinc oxide thin film, and wherein the moisture contained in the zinc oxide thin film is separated from the zinc oxide thin film through collision of the moisture and the activated hydrogen gas.
2. The method of removing moisture according to claim 1 , wherein the chamber in which the substrate is loaded has a pressure in a range of 10 −7 to 10 −3 Torr.
3. The method of removing moisture according to claim 1 , further comprising reducing the pressure in the chamber after the annealing.
4. The method of removing moisture according to claim 3 , wherein the pressure in the chamber is reduced to 10 −7 to 10 −3 Torr after the annealing.
5. The method of removing moisture according to claim 1 , wherein the flux of the hydrogen gas is 10 to 500 seem.
6. The method of removing moisture according to claim 1 , wherein a temperature in the chamber is 120 to 200° C. during the annealing.
7. The method of removing moisture according to claim 1 , wherein the annealing is performed for 3 to 60 minutes.
8. The method of removing moisture according to claim 1 , wherein the zinc oxide thin film includes a dopant supplied from a group consisting of at least one of boron (B), aluminum (Al), gallium (Ga) and indium (In).
9. A method of manufacturing a solar cell, comprising:
loading a substrate having a zinc oxide thin film into a chamber, the zinc oxide thin film containing moisture;
flowing a hydrogen gas into the chamber at a flux;
fixing pressure at 0.3 to 5 Torr in the chamber; and
annealing the zinc oxide thin film using the hydrogen gas in the chamber so that the hydrogen gas is activated and the activated hydrogen gas is diffused into the zinc oxide thin film, and wherein the moisture contained in the zinc oxide thin film is separated from the zinc oxide thin film through collision of the moisture and the activated hydrogen gas.
10. The method according to claim 9 , wherein the chamber in which the substrate is loaded has a pressure in a range of 10 −7 to 10 −3 Torr.
11. The method according to claim 9 , further comprising reducing the pressure in the chamber after the annealing.
12. The method according to claim 11 , wherein the pressure in the chamber is reduced to 10 −7 to 10 −3 Torr after the annealing.
13. The method according to claim 9 , wherein the flux of the hydrogen gas is 10 to 500 sccm.
14. The method according to claim 9 , wherein a temperature in the chamber is 120 to 200° C. during the annealing.
15. The method according to claim 9 , wherein the annealing is performed for 3 to 60 minutes.
16. The method according to claim 9 , wherein the zinc oxide thin film includes a dopant supplied from a group consisting of at least of boron (B), aluminum (Al), gallium (Ga) and indium (In).
17. A method of removing moisture from a zinc oxide thin film, comprising:
loading a substrate coated with a zinc oxide thin film into a chamber, the zinc oxide thin film containing moisture;
pressurizing the chamber at a first pressure range of 10 −7 to 10 −3 Torr;
flowing a hydrogen gas into the chamber at a flux in the range of 10 to 500 seem;
fixing the chamber at a second pressure range of 0.3 to 5 Torr; and
removing moisture from the zinc oxide thin film by annealing the zinc oxide thin film using the hydrogen gas in the chamber, the chamber set at a temperature in a range of 120-200° C., and wherein annealing comprises activating the hydrogen gas within the chamber with heat to diffuse the hydrogen gas into the zinc oxide thin film so that the moisture contained in the zinc oxide thin film is removed from the zinc oxide thin film through collision of the moisture and the activated hydrogen gas.