Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same
View Patent ↗A method for manufacturing a semiconductor device, includes the steps of: forming a resin layer on an upper surface of a substrate including a photodiode such that the resin layer does not cover a light receiving region of the photodiode; forming at least one groove in the resin layer so as to surround the light receiving region; and subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin.
1. A method for manufacturing a semiconductor device, comprising the steps of:
providing a substrate on which is formed (a) a light receiving region of a photodiode, (b) an interconnection wiring layer surrounding the light receiving region, and (c) electrode pads on the interconnection wiring layer;
forming a resin layer on an upper surface of the light receiving region, the electrode pads, and the interconnection wiring layer;
forming, in the resin layer, an opening through which the upper surface of the light receiving region of the photodiode is exposed;
removing a portion of the resin layer to expose the electrode pads;
forming one or more grooves in the resin layer that completely surround the opening and the light receiving region; and
subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin,
wherein,
after the grooves are formed, the resin layer remains on the interconnection wiring layer in regions other than portions corresponding to the light receiving region, the one or more grooves, and the electrode pads,
the one or more grooves are effective to prevent the molding resin from entering the opening over the upper surface of the light receiving region of the photodiode.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the one or more grooves include a plurality of concentric circular grooves having different diameters.
3. The method for manufacturing a semiconductor device according to claim 1 or 2 , wherein the light receiving region and the one or more grooves are covered with a resin film before the mold is filled with the molding resin.
4. The method for manufacturing a semiconductor device according to claim 1 or claim 2 , wherein the resin layer is formed with a polyimide resin.