Stripper For Copper/Low k BEOL Clean
The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
1 . A chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, carboxylic acid, glycol, glycol ether and a fluoride.
2 . The formulation of claim 1 comprises deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
3 . The formulation of claim 1 wherein the formulation contains the recited amounts of the components of the formulation:
DIW
90.00
Acetic Acid
0.50
PG
4.40
DPM
5.00
NH 4 F (40%)
0.10
4 . A process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, carboxylic acid, glycol, glycol ether and a fluoride.
5 . The formulation of claim 4 comprises deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
6 . The process of claim 5 wherein the formulation contains the recited amounts of the components of the formulation:
DIW
90.00
Acetic Acid
0.50
PG
4.40
DPM
5.00
NH 4 F (40%)
0.10